Gate Drivers

Showing

of 9

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	DigiKey Programmable	Driven Configuration	Channel Type	Number of Drivers	Gate Type	Voltage - Supply	Logic Voltage - VIL, VIH	Current - Peak Output (Source, Sink)	Input Type	High Side Voltage - Max (Bootstrap)	Rise / Fall Time (Typ)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
1EDN7512BXTSA1 IC GATE DRVR LOW-SIDE SOT23-5 Infineon Technologies	7.035 In Stock	1 : 0,56000 € Cut Tape (CT) 3.000 : 0,24793 € Tape & Reel (TR)	EiceDRIVER™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	Not Verified	Low-Side	Single	1	GaN FET, MOSFET (N-Channel)	4.5V ~ 20V	-	4A, 8A	Inverting, Non-Inverting	20 V	6.5ns, 4.5ns	-40°C ~ 150°C (TJ)	Surface Mount	SC-74A, SOT-753	PG-SOT23-5-1
IRS10752LTRPBF IC GATE DRVR HIGH-SIDE SOT23-6 Infineon Technologies	6.492 In Stock	1 : 0,65000 € Cut Tape (CT) 3.000 : 0,29644 € Tape & Reel (TR)	µHVIC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	Not Verified	High-Side	Single	1	MOSFET (N-Channel)	10V ~ 18V	0.8V, 2.2V	160mA, 240mA	Non-Inverting	100 V	85ns, 40ns	-40°C ~ 125°C (TJ)	Surface Mount	SOT-23-6	PG-SOT23-6
IRS2011STRPBF IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	1.780 In Stock	1 : 1,03000 € Cut Tape (CT) 2.500 : 0,49332 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	Not Verified	Half-Bridge	Independent	2	MOSFET (N-Channel)	10V ~ 20V	0.7V, 2.5V	1A, 1A	Inverting	200 V	25ns, 15ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
1ED44173N01BXTSA1 IC GATE DRVR LOW-SIDE SOT23-6 Infineon Technologies	10.762 In Stock	1 : 0,71000 € Cut Tape (CT) 3.000 : 0,32490 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	Not Verified	Low-Side	Single	1	MOSFET (N-Channel)	8.6V ~ 20V	1.2V, 1.9V	2.6A, 2.6A	Non-Inverting	-	5ns, 5ns	-40°C ~ 125°C (TA)	Surface Mount	SOT-23-6	PG-SOT23-6-3
IRS4427STRPBF IC GATE DRVR LOW-SIDE 8SOIC Infineon Technologies	1.168 In Stock	1 : 1,01000 € Cut Tape (CT) 2.500 : 0,48530 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	Not Verified	Low-Side	Independent	2	IGBT, MOSFET (N-Channel)	6V ~ 20V	0.8V, 2.5V	2.3A, 3.3A	Non-Inverting	-	25ns, 25ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
2EDL23N06PJXUMA1 IC GATE DRVR HALF-BRIDGE 14DSO Infineon Technologies	1.224 In Stock	1 : 2,00000 € Cut Tape (CT) 2.500 : 1,02149 € Tape & Reel (TR)	EiceDRIVER™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	Not Verified	Half-Bridge	Independent	2	MOSFET (N-Channel)	10V ~ 17.5V	1.1V, 1.7V	1.8A, 2.3A	Non-Inverting	600 V	48ns, 37ns	-40°C ~ 150°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	PG-DSO-14-2
6EDL04N02PRXUMA1 IC GATE DRVR HALF-BRIDGE 28TSSOP Infineon Technologies	11.587 In Stock	1 : 3,00000 € Cut Tape (CT) 3.000 : 1,58624 € Tape & Reel (TR)	EiceDRIVER™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	Not Verified	Half-Bridge	3-Phase	6	IGBT, MOSFET (N-Channel, P-Channel)	10V ~ 17.5V	1.1V, 1.7V	-	Non-Inverting	200 V	60ns, 26ns	-40°C ~ 125°C (TJ)	Surface Mount	28-TSSOP (0.173", 4.40mm Width)	PG-TSSOP-28
IRS21271STRPBF IC GATE DRVR HIGH-SIDE 8SOIC Infineon Technologies	882 In Stock	1 : 0,85000 € Cut Tape (CT) 2.500 : 0,39855 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	Not Verified	High-Side	Single	1	IGBT, MOSFET (N-Channel)	9V ~ 20V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	600 V	80ns, 40ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
2EDS8165HXUMA1 IC GATE DRVR HALF-BRIDGE 16SOIC Infineon Technologies	0 In Stock Check Lead Time	1 : 2,12000 € Cut Tape (CT) 1.000 : 1,13167 € Tape & Reel (TR)	EiceDRIVER™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	Not Verified	Half-Bridge	Independent	2	MOSFET (N-Channel, P-Channel)	20V	-, 1.65V	1A, 2A	Non-Inverting	-	6.5ns, 4.5ns	-40°C ~ 125°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	PG-DSO-16-30

Showing

of 9

Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.