FET, MOSFET Arrays

Results: 3
Stocking Options
Environmental Options
Media
Exclude
3Results

Showing
of 3
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
eGaN Series
EPC2103
MOSFET 2N-CH 80V 28A DIE
EPC
6.414
In Stock
1 : 9,25000 €
Cut Tape (CT)
500 : 4,35020 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
GaNFET (Gallium Nitride)
2 N-Channel (Half Bridge)
-
80V
28A
5.5mOhm @ 20A, 5V
2.5V @ 7mA
6.5nC @ 5V
760pF @ 40V
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
MOSFET Array
EPC2111
MOSFET 2N-CH 30V 16A DIE
EPC
18.725
In Stock
1 : 3,73000 €
Cut Tape (CT)
2.500 : 1,29969 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
GaNFET (Gallium Nitride)
2 N-Channel (Half Bridge)
-
30V
16A (Ta)
19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
2.5V @ 2mA, 2.5V @ 5mA
2.2nC @ 5V, 5.8nC @ 5V
230pF @ 15V, 595pF @ 15V
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
EPC2107
EPC2107
MOSFET 3N-CH 100V 9BGA
EPC
5.068
In Stock
1 : 2,44000 €
Cut Tape (CT)
2.500 : 0,73040 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
GaNFET (Gallium Nitride)
3 N-Channel (Half Bridge + Synchronous Bootstrap)
-
100V
1.7A, 500mA
320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
2.5V @ 100µA, 2.5V @ 20µA
0.16nC @ 5V, 0.044nC @ 5V
16pF @ 50V, 7pF @ 50V
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
9-VFBGA
9-BGA (1.35x1.35)
Showing
of 3

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.