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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
eGaN Series
EPC2040
GANFET NCH 15V 3.4A DIE
EPC
62.752
In Stock
1 : 1,18000 €
Cut Tape (CT)
2.500 : 0,49985 €
Tape & Reel (TR)
Tape & Reel (TR)
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Digi-Reel®
ActiveN-ChannelGaNFET (Gallium Nitride)15 V3.4A (Ta)5V30mOhm @ 1.5A, 5V2.5V @ 1mA0.93 nC @ 5 V-105 pF @ 6 V---40°C ~ 150°C (TJ)Surface MountDieDie
EPC2216
EPC2216
GANFET N-CH 15V 3.4A DIE
EPC
46.908
In Stock
1 : 1,40000 €
Cut Tape (CT)
2.500 : 0,59357 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelGaNFET (Gallium Nitride)15 V3.4A (Ta)5V26mOhm @ 1.5A, 5V2.5V @ 1mA1.1 nC @ 5 V+6V, -4V118 pF @ 7.5 VStandard--40°C ~ 150°C (TJ)Surface MountDieDie
25P06
G70P02K
P15V,RD(MAX)<8.5M@-4.5V,RD(MAX)<
Goford Semiconductor
1.428
In Stock
1 : 0,92000 €
Cut Tape (CT)
2.500 : 0,39050 €
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-
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Digi-Reel®
ActiveP-ChannelMOSFET (Metal Oxide)15 V70A (Tc)2.5V, 4.5V8.5mOhm @ 20A, 4.5V1.5V @ 250µA55 nC @ 4.5 V±12V3500 pF @ 10 V-70W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
8-SOIC
TPS1100D
MOSFET P-CH 15V 1.6A 8SOIC
Texas Instruments
389
In Stock
1 : 1,91000 €
Tube
-
Tube
ActiveP-ChannelMOSFET (Metal Oxide)15 V1.6A (Ta)2.7V, 10V180mOhm @ 1.5A, 10V1.5V @ 250µA5.45 nC @ 10 V+2V, -15V--791mW (Ta)-40°C ~ 150°C (TJ)Surface Mount8-SOIC8-SOIC (0.154", 3.90mm Width)
8-SOIC
TPS1101D
MOSFET P-CH 15V 2.3A 8SOIC
Texas Instruments
170
In Stock
1 : 2,85000 €
Tube
-
Tube
ActiveP-ChannelMOSFET (Metal Oxide)15 V2.3A (Ta)2.7V, 10V90mOhm @ 2.5A, 10V1.5V @ 250µA11.25 nC @ 10 V+2V, -15V--791mW (Ta)-40°C ~ 150°C (TJ)Surface Mount8-SOIC8-SOIC (0.154", 3.90mm Width)
8-TSSOP
TPS1100PW
MOSFET P-CH 15V 1.27A 8TSSOP
Texas Instruments
555
In Stock
9.900
Factory
1 : 1,91000 €
Tube
-
Tube
ActiveP-ChannelMOSFET (Metal Oxide)15 V1.27A (Ta)2.7V, 10V180mOhm @ 1.5A, 10V1.5V @ 250µA5.45 nC @ 10 V+2V, -15V--504mW (Ta)-40°C ~ 150°C (TJ)Surface Mount8-TSSOP8-TSSOP (0.173", 4.40mm Width)
0
In Stock
1 : 0,29000 €
Cut Tape (CT)
3.000 : 0,05132 €
Tape & Reel (TR)
-
Tape & Reel (TR)
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ActiveP-ChannelMOSFET (Metal Oxide)15 V5.6A (Ta)1.8V, 4.5V36.4mOhm @ 5.6A, 4.5V1V @ 250µA7.2 nC @ 4.5 V±10V890 pF @ 9 V-1.2W (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-23TO-236-3, SC-59, SOT-23-3
8-TSSOP
TPS1100PWR
MOSFET P-CH 15V 1.27A 8TSSOP
Texas Instruments
0
In Stock
10.000
Marketplace
2.000 : 0,75758 €
Tape & Reel (TR)
418 : 0,73029 €
Bulk
-
Tape & Reel (TR)
Cut Tape (CT)
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Bulk
ActiveP-ChannelMOSFET (Metal Oxide)15 V1.27A (Ta)2.7V, 10V180mOhm @ 1.5A, 10V1.5V @ 250µA5.45 nC @ 10 V+2V, -15V--504mW (Ta)-40°C ~ 150°C (TJ)Surface Mount8-TSSOP8-TSSOP (0.173", 4.40mm Width)
8-SOIC
TPS1100DR
MOSFET P-CH 15V 1.6A 8SOIC
Texas Instruments
0
In Stock
564
Marketplace
2.500 : 0,75758 €
Tape & Reel (TR)
398 : 0,76073 €
Bulk
-
Tape & Reel (TR)
Bulk
ActiveP-ChannelMOSFET (Metal Oxide)15 V1.6A (Ta)2.7V, 10V180mOhm @ 1.5A, 10V1.5V @ 250µA5.45 nC @ 10 V+2V, -15V--791mW (Ta)-40°C ~ 150°C (TJ)Surface Mount8-SOIC8-SOIC (0.154", 3.90mm Width)
16-TSSOP
TPS1101PWR
MOSFET P-CH 15V 2.18A 16TSSOP
Texas Instruments
0
In Stock
3.000
Marketplace
10.000
Factory
2.000 : 1,05437 €
Tape & Reel (TR)
293 : 1,04474 €
Bulk
-
Tape & Reel (TR)
Cut Tape (CT)
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Bulk
ActiveP-ChannelMOSFET (Metal Oxide)15 V2.18A (Ta)2.7V, 10V90mOhm @ 2.5A, 10V1.5V @ 250µA11.25 nC @ 10 V+2V, -15V--710mW (Ta)-40°C ~ 150°C (TJ)Surface Mount16-TSSOP16-TSSOP (0.173", 4.40mm Width)
8-SOIC
TPS1101DR
MOSFET P-CH 15V 2.3A 8SOIC
Texas Instruments
0
In Stock
2.500
Factory
2.500 : 1,10762 €
Tape & Reel (TR)
-
Tape & Reel (TR)
ActiveP-ChannelMOSFET (Metal Oxide)15 V2.3A (Ta)2.7V, 10V90mOhm @ 2.5A, 10V1.5V @ 250µA11.25 nC @ 10 V+2V, -15V--791mW (Ta)-40°C ~ 150°C (TJ)Surface Mount8-SOIC8-SOIC (0.154", 3.90mm Width)
Showing
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15 V Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.