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Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
eGaN Series
EPC2106
GANFET TRANS SYM 100V BUMPED DIE
EPC
99.317
In Stock
1 : 1,58000 €
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2.500 : 0,79472 €
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ActiveGaNFET (Gallium Nitride)2 N-Channel (Half Bridge)-100V1.7A70mOhm @ 2A, 5V2.5V @ 600µA0.73nC @ 5V75pF @ 50V--40°C ~ 150°C (TJ)Surface MountDieDie
eGaN Series
EPC2104
GAN TRANS SYMMETRICAL HALF BRIDG
EPC
2.192
In Stock
1 : 8,00000 €
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500 : 5,70286 €
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ActiveGaNFET (Gallium Nitride)2 N-Channel (Half Bridge)-100V23A6.3mOhm @ 20A, 5V2.5V @ 5.5mA7nC @ 5V800pF @ 50V--40°C ~ 150°C (TJ)Surface MountDieDie
BSM300D12P2E001
BSM300D12P2E001
MOSFET 2N-CH 1200V 300A
Rohm Semiconductor
69
In Stock
1 : 779,31000 €
Tray
-
Tray
ActiveSilicon Carbide (SiC)2 N-Channel (Half Bridge)-1200V (1.2kV)300A (Tc)-4V @ 68mA-35000pF @ 10V1875W-40°C ~ 150°C (TJ)Chassis MountModuleModule
611.352
In Stock
1 : 0,23000 €
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3.000 : 0,04352 €
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-
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ActiveMOSFET (Metal Oxide)2 N-Channel (Dual)-60V300mA1.5Ohm @ 100mA, 10V2.1V @ 250µA0.6nC @ 4.5V40pF @ 10V285mW150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363US6
SOT-563
SSM6L56FE,LM
SMALL-SIGNAL MOSFET 2 IN 1 NCH +
Toshiba Semiconductor and Storage
10.506
In Stock
1 : 0,34000 €
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4.000 : 0,06966 €
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-
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ActiveMOSFET (Metal Oxide)N and P-ChannelLogic Level Gate, 1.5V Drive20V800mA (Ta)235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V1V @ 1mA1nC @ 10V55pF @ 10V, 100pF @ 10V150mW (Ta)150°CSurface MountSOT-563, SOT-666ES6
6-TSSOP, SC-88, SOT-363
SSM6N37FU,LF
MOSFET 2 N-CHANNEL 20V 250MA US6
Toshiba Semiconductor and Storage
58.050
In Stock
1 : 0,36000 €
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3.000 : 0,07182 €
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-
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ActiveMOSFET (Metal Oxide)2 N-Channel (Dual)Logic Level Gate, 1.5V Drive20V250mA (Ta)2.2Ohm @ 100mA, 4.5V1V @ 1mA-12pF @ 10V300mW150°CSurface Mount6-TSSOP, SC-88, SOT-363US6
SOT 26
DMC2700UDM-7
MOSFET N/P-CH 20V SOT26
Diodes Incorporated
1.290.995
In Stock
1 : 0,38000 €
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3.000 : 0,07842 €
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-
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ActiveMOSFET (Metal Oxide)N and P-ChannelLogic Level Gate20V1.34A, 1.14A400mOhm @ 600mA, 4.5V1V @ 250µA0.74nC @ 4.5V60.67pF @ 16V1.12W-55°C ~ 150°C (TJ)Surface MountSOT-23-6SOT-26
SOT363
BSS138PS,115
MOSFET 2N-CH 60V 0.32A 6TSSOP
Nexperia USA Inc.
33.611
In Stock
1 : 0,39000 €
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3.000 : 0,08082 €
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ActiveMOSFET (Metal Oxide)2 N-Channel (Dual)Logic Level Gate60V320mA1.6Ohm @ 300mA, 10V1.5V @ 250µA0.8nC @ 4.5V50pF @ 10V420mW150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-3636-TSSOP
SOT363
2N7002BKS,115
MOSFET 2N-CH 60V 0.3A 6TSSOP
Nexperia USA Inc.
129.600
In Stock
1 : 0,44000 €
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3.000 : 0,08221 €
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ActiveMOSFET (Metal Oxide)2 N-Channel (Dual)Logic Level Gate60V300mA1.6Ohm @ 500mA, 10V2.1V @ 250µA0.6nC @ 4.5V50pF @ 10V295mW150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-3636-TSSOP
EMT6_EMT6 PKg
EM6K34T2CR
MOSFET 2N-CH 50V 0.2A EMT6
Rohm Semiconductor
180.643
In Stock
1 : 0,36000 €
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8.000 : 0,08221 €
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-
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ActiveMOSFET (Metal Oxide)2 N-Channel (Dual)Logic Level Gate, 0.9V Drive50V200mA2.2Ohm @ 200mA, 4.5V800mV @ 1mA-26pF @ 10V120mW150°C (TJ)Surface MountSOT-563, SOT-666EMT6
SOT-563
SSM6L36FE,LM
MOSFET N/P-CH 20V 0.5A/0.33A ES6
Toshiba Semiconductor and Storage
53.881
In Stock
1 : 0,41000 €
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4.000 : 0,08410 €
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-
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ActiveMOSFET (Metal Oxide)N and P-ChannelLogic Level Gate20V500mA, 330mA630mOhm @ 200mA, 5V1V @ 1mA1.23nC @ 4V46pF @ 10V150mW150°C (TJ)Surface MountSOT-563, SOT-666ES6
UMT6
UM6K34NTCN
MOSFET 2N-CH 50V 0.2A UMT6
Rohm Semiconductor
495.444
In Stock
1 : 0,36000 €
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3.000 : 0,08704 €
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-
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ActiveMOSFET (Metal Oxide)2 N-Channel (Dual)Logic Level Gate, 0.9V Drive50V200mA2.2Ohm @ 200mA, 4.5V800mV @ 1mA-26pF @ 10V120mW150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363UMT6
SOT666
NX3020NAKV,115
MOSFET 2N-CH 30V 200MA SOT666
Nexperia USA Inc.
8.140
In Stock
1 : 0,37000 €
Cut Tape (CT)
4.000 : 0,08855 €
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-
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Not For New DesignsMOSFET (Metal Oxide)2 N-Channel (Dual)Logic Level Gate30V200mA4.5Ohm @ 100mA, 10V1.5V @ 250µA0.44nC @ 4.5V13pF @ 10V375mW-55°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SOT-666
SOT-563-6_463A
NTZD3155CT2G
MOSFET N/P-CH 20V SOT-563
onsemi
81.094
In Stock
696.000
Factory
1 : 0,41000 €
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4.000 : 0,08860 €
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-
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ActiveMOSFET (Metal Oxide)N and P-ChannelLogic Level Gate20V540mA, 430mA550mOhm @ 540mA, 4.5V1V @ 250µA2.5nC @ 4.5V150pF @ 16V250mW-55°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SOT-563
SOT363
BSS138BKS,115
MOSFET 2N-CH 60V 0.32A 6TSSOP
Nexperia USA Inc.
416.316
In Stock
1 : 0,44000 €
Cut Tape (CT)
3.000 : 0,08935 €
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ActiveMOSFET (Metal Oxide)2 N-Channel (Dual)Logic Level Gate60V320mA1.6Ohm @ 320mA, 10V1.6V @ 250µA0.7nC @ 4.5V56pF @ 10V445mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-3636-TSSOP
SOT363
NX3008NBKS,115
MOSFET 2N-CH 30V 0.35A 6TSSOP
Nexperia USA Inc.
66.272
In Stock
1 : 0,46000 €
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3.000 : 0,09251 €
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ActiveMOSFET (Metal Oxide)2 N-Channel (Dual)Logic Level Gate30V350mA1.4Ohm @ 350mA, 4.5V1.1V @ 250µA0.68nC @ 4.5V50pF @ 15V445mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-3636-TSSOP
SOT-563-6_463A
NTZD3154NT1G
MOSFET 2N-CH 20V 540MA SOT563
onsemi
550.483
In Stock
1 : 0,44000 €
Cut Tape (CT)
4.000 : 0,09383 €
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-
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ActiveMOSFET (Metal Oxide)2 N-Channel (Dual)-20V540mA550mOhm @ 540mA, 4.5V1V @ 250µA2.5nC @ 4.5V150pF @ 16V250mW-55°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SOT-563
SOT 363
NTJD4401NT1G
MOSFET 2N-CH 20V 630MA SOT363
onsemi
39.175
In Stock
1 : 0,44000 €
Cut Tape (CT)
3.000 : 0,09436 €
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-
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ActiveMOSFET (Metal Oxide)2 N-Channel (Dual)Logic Level Gate20V630mA375mOhm @ 630mA, 4.5V1.5V @ 250µA3nC @ 4.5V46pF @ 20V270mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SC-88/SC70-6/SOT-363
SOT363
PMGD280UN,115
MOSFET 2N-CH 20V 0.87A 6TSSOP
Nexperia USA Inc.
128.056
In Stock
1 : 0,44000 €
Cut Tape (CT)
3.000 : 0,09745 €
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Not For New DesignsMOSFET (Metal Oxide)2 N-Channel (Dual)Logic Level Gate20V870mA340mOhm @ 200mA, 4.5V1V @ 250µA0.89nC @ 4.5V45pF @ 20V400mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-3636-TSSOP
SOT363
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
Nexperia USA Inc.
80.335
In Stock
1 : 0,44000 €
Cut Tape (CT)
3.000 : 0,09747 €
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Not For New DesignsMOSFET (Metal Oxide)2 N-Channel (Dual)Logic Level Gate20V860mA350mOhm @ 200mA, 4.5V1.5V @ 250µA0.72nC @ 4.5V34pF @ 20V410mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-3636-TSSOP
SOT 363
NTJD4001NT1G
MOSFET 2N-CH 30V 0.25A SOT-363
onsemi
305.679
In Stock
1 : 0,36000 €
Cut Tape (CT)
3.000 : 0,09753 €
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-
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ActiveMOSFET (Metal Oxide)2 N-Channel (Dual)-30V250mA1.5Ohm @ 10mA, 4V1.5V @ 100µA1.3nC @ 5V33pF @ 5V272mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SC-88/SC70-6/SOT-363
SOT-563-6_463A
NTZD3152PT1G
MOSFET 2P-CH 20V 430MA SOT563
onsemi
30.800
In Stock
1 : 0,47000 €
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4.000 : 0,10029 €
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-
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ActiveMOSFET (Metal Oxide)2 P-Channel (Dual)-20V430mA900mOhm @ 430mA, 4.5V1V @ 250µA2.5nC @ 4.5V175pF @ 16V250mW-55°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SOT-563
SOT-23-6
SIL2308-TP
N/P-CHANNEL MOSFETSOT23-6L
Micro Commercial Co
1.240
In Stock
1 : 0,37000 €
Cut Tape (CT)
3.000 : 0,10633 €
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-
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ActiveMOSFET (Metal Oxide)N and P-Channel-20V5A, 4A38mOhm @ 4.5A, 4.5V, 90mOhm @ 500mA, 4.5V1V @ 250µA11nC @ 4.5V, 12nC @ 2.5V800pF, 405pF @ 8V, 10V--55°C ~ 150°C (TJ)Surface MountSOT-23-6SOT-23-6L
SOT-563-6_463A
NTZD3155CT1G
MOSFET N/P-CH 20V SOT-563
onsemi
84.027
In Stock
1 : 0,39000 €
Cut Tape (CT)
4.000 : 0,10680 €
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-
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ActiveMOSFET (Metal Oxide)N and P-ChannelLogic Level Gate20V540mA, 430mA550mOhm @ 540mA, 4.5V1V @ 250µA2.5nC @ 4.5V150pF @ 16V250mW-55°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SOT-563
8-SO
DMP3085LSD-13
MOSFET 2P-CH 30V 3.9A 8SO
Diodes Incorporated
350.903
In Stock
1 : 0,35000 €
Cut Tape (CT)
2.500 : 0,10928 €
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ActiveMOSFET (Metal Oxide)2 P-Channel (Dual)Logic Level Gate30V3.9A70mOhm @ 5.3A, 10V3V @ 250µA11nC @ 10V563pF @ 25V1.1W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
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Transistors - FETs, MOSFETs - Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.