TO-220-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPP80N06S2L09AKSA1

Digi-Key Part Number
IPP80N06S2L09AKSA1-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
IPP80N06S2L09AKSA1
Description
MOSFET N-CH 55V 80A TO220-3
Detailed Description
N-Channel 55 V 80A (Tc) 190W (Tc) Through Hole PG-TO220-3-1
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Discontinued at Digi-Key
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.5mOhm @ 52A, 10V
Vgs(th) (Max) @ Id
2V @ 125µA
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2620 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
190W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3
Base Product Number
IPP80N
Documents & Media
Resource TypeLink
DatasheetsIPB,IPP80N06S2L-09
Other Related DocumentsPart Number Guide
Featured ProductData Processing Systems
HTML DatasheetIPB,IPP80N06S2L-09
Environmental & Export Classifications
AttributeDescription
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS8541.29.0095
Additional Resources
AttributeDescription
Other Names
IPP80N06S2L-09
IPP80N06S2L-09-ND
SP000218742
Standard Package500
Substitutes (3)
Part No.ManufacturerQuantity AvailableDigi-Key Part No.Unit PriceSubstitute Type
IRF830APBFVishay Siliconix2.774IRF830APBF-ND1,53000 €Similar
STP141NF55STMicroelectronics2.192497-7023-5-ND2,75000 €Similar
IRFBC30APBFVishay Siliconix1.965IRFBC30APBF-ND2,99000 €Similar