EPC2030/31/32 eGaN FET
The EPC2030/31/32 expand EPC's line of eGaN power transistors with high-performance, wider-pitch, chip-scale packages
EPC announces the extension of the eGaN power transistor portfolio with high-performance, wider-pitch, chip-scale packages for ease of high volume manufacturing and enhanced compatibility with mature manufacturing processes and assembly lines. Joining the 80 V EPC2029 are three new devices in 40 V (EPC2030), 60 V (EPC2031), and 100 V (EPC2032).
The EPC2030/31/32 enhancement mode power transistors expand EPC's family of "relaxed pitch" devices featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 4.6 x 2.6 mm footprint. Compared to state-of-the art silicon power MOFSETs with similar on-resistance, these products are much smaller and have many times superior switching performance. They are ideal for applications such as high frequency DC/DC converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, and class-D audio.
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