EPC2030/31/32 eGaN FET

The EPC2030/31/32 expand EPC's line of eGaN power transistors with high-performance, wider-pitch, chip-scale packages

Image of EPC's EPC2030/31/32 eGan FETEPC announces the extension of the eGaN power transistor portfolio with high-performance, wider-pitch, chip-scale packages for ease of high volume manufacturing and enhanced compatibility with mature manufacturing processes and assembly lines. Joining the 80 V EPC2029 are three new devices in 40 V (EPC2030), 60 V (EPC2031), and 100 V (EPC2032).

The EPC2030/31/32 enhancement mode power transistors expand EPC's family of "relaxed pitch" devices featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 4.6 x 2.6 mm footprint. Compared to state-of-the art silicon power MOFSETs with similar on-resistance, these products are much smaller and have many times superior switching performance. They are ideal for applications such as high frequency DC/DC converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, and class-D audio.

EPC2030 Features EPC2031 Features EPC2032 Features
  • VDS, 40 V
  • RDS(ON), 2.4 mΩ
  • ID, 31 A
  • Pulsed ID, 495 A
  • RoHS 6/6
  • Halogen Free
  • VDS, 60 V
  • RDS(ON), 2.6 mΩ
  • ID, 31 A
  • Pulsed ID, 450 A
  • RoHS 6/6
  • Halogen Free
  • VDS, 100 V
  • RDS(ON), 4 mΩ
  • ID, 31 A
  • Pulsed ID, 300 A
  • RoHS 6/6
  • Halogen Free

EPC2030/31/32

ImageManufacturer Part NumberDescriptionAvailable Quantity
GANFET NCH 40V 31A DIEEPC2030GANFET NCH 40V 31A DIE8403 - ImmediateView Details
GANFET NCH 60V 31A DIEEPC2031GANFET NCH 60V 31A DIE3081 - ImmediateView Details
GANFET TRANS 100V 48A BUMPED DIEEPC2032GANFET TRANS 100V 48A BUMPED DIE378 - ImmediateView Details
Published: 2015-05-29