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BSS83P Datasheet

Infineon Technologies

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Datasheet

2012-03-30
Rev. 1.5 Page 1
BSS 83 P
SIPMOS Small-Signal-Transistor
Features
P-Channel
Enhancement mode
Avalanche rated
Logic Level
d
v
/d
t
rated
Product Summary
Drain source voltage V
V
DS -60
Drain-source on-state resistance
R
DS(on) 2
Continuous drain current A
I
D-0.33
1
2
3
VPS05161
Type
Package
Tape and Reel
BSS 83 P
PG-SOT-23
H
6327: 3000pcs/r.
Marking
YAs
Pin 1
PIN 2
PIN 3
G
S
D
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Unit
Value
-0.33
-0.27
A
Continuous drain current
T
A
= 25 °C
T
A
= 70 °C
I
D
Pulsed drain current
T
A
= 25 °C
I
D puls
-1.32
Avalanche energy, single pulse
I
D
= -0.33 A ,
V
DD
= -25 V,
R
GS
= 25
9.5
mJ
E
AS
Avalanche energy, periodic limited by
T
jmax
E
AR
0.036
d
v
/d
t
6
Reverse diode d
v
/d
t
I
S
= -0.33 A,
V
DS
= -48 V, d
i
/d
t
= 200 A/µs,
T
jmax
= 150 °C
kV/µs
Gate source voltage
V
GS
20
V
Power dissipation
T
A
= 25 °C
P
tot
0.36
W
Operating and storage temperature
T
j ,
T
stg
-55...+150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
Qualified according to AEC Q101
Halogen-free according to IEC61249-2-21
ESD Class; JESD22-A114-HBM
Class 0
2012-03-30
Rev. 1.5 Page 2
BSS 83 P
Thermal Characteristics
Parameter Symbol UnitValues
min. max.typ.
Characteristics
Thermal resistance, junction - soldering point
( Pin 3 )
150 K/W-
R
thJS -
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
R
thJA
-
-
-
-
350
300
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS = 0 V,
I
D = -250 µA
V
(BR)DSS -60 - V-
Gate threshold voltage,
V
GS =
V
DS
I
D = -80 µA
-1 -1.5 -2
V
GS(th)
Zero gate voltage drain current
V
DS = -60 V,
V
GS = 0 V,
T
j = 25 °C
V
DS = -60 V,
V
GS = 0 V,
T
j = 125 °C
µA
-1
-100
I
DSS
-0.1
-10
-
-
I
GSS - -10 -100Gate-source leakage current
V
GS = -20 V,
V
DS = 0 V
nA
Drain-source on-state resistance
V
GS = -4.5 V,
I
D = -0.27 A
R
DS(on) - 2 3
Drain-source on-state resistance
V
GS = -10 V,
I
D = -0.33 A
R
DS(on) - 1.4 2
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2012-03-30
Rev. 1.5 Page 3
BSS 83 P
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
DS 2*
I
D*
R
DS(on)max ,
I
D = -0.27 A
0.24
g
fs S-0.47
Input capacitance
V
GS = 0 V,
V
DS = -25 V,
f
= 1 MHz
C
iss 62 78 pF-
C
oss - 2419Output capacitance
V
GS = 0 V,
V
DS = -25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS = 0 V,
V
DS = -25 V,
f
= 1 MHz
97
C
rss -
Turn-on delay time
V
DD = -30 V,
V
GS = -4.5 V,
I
D = -0.27 A,
R
G = 43
- 35 ns23
t
d(on)
Rise time
V
DD = -30 V,
V
GS = -4.5 V,
I
D = -0.27 A,
R
G = 43
t
r- 10671
56 70
t
d(off)
Turn-off delay time
V
DD = -30 V,
V
GS = -4.5 V,
I
D = -0.27 A,
R
G = 43
-
Fall time
V
DD = -30 V,
V
GS = -4.5 V,
I
D = -0.27 A,
R
G = 43
t
f- 61 76
2012-03-30
Rev. 1.5 Page 4
BSS 83 P
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Unit
ValuesSymbolParameter
min. typ. max.
Dynamic Characteristics
Gate to source charge
V
DD = -48 V,
I
D = -0.33 A
-
Q
gs nC0.180.12
Gate to drain charge
V
DD = -48 ,
I
D = -0.33 A
Q
gd 1.1 1.65-
3.57-
Q
g
Gate charge total
V
DD = -48 V,
I
D = -0.33 A,
V
GS = 0 to -10 V
2.38
Gate plateau voltage
V
DD = -48 V ,
I
D = -0.33 A
V
(plateau) - -2.94 - V
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
A = 25 °C
I
S- - -0.33 A
Inverse diode direct current,pulsed
T
A = 25 °C
I
SM - - -1.32
Inverse diode forward voltage
V
GS = 0 V,
I
F = -0.33
V
SD - -0.84 -1.1 V
Reverse recovery time
V
R = -30 V,
I
F=
I
S , d
i
F/d
t
= 80 A/µs
t
rr - 59.4 89 ns
Reverse recovery charge
V
R = -30 V,
I
F=
l
S , d
i
F/d
t
= 80 A/µs
Q
rr - 37.5 56 nC
2012-03-30
Rev. 1.5 Page 5
BSS 83 P
Drain current
I
D =
f
(
T
A)
parameter:
V
GS 10 V
0 20 40 60 80 100 120 °C 160
T
A
0.00
-0.04
-0.08
-0.12
-0.16
-0.20
-0.24
-0.28
A
-0.36
BSS 83 P
I
D
Power Dissipation
P
tot =
f
(
T
A)
0 20 40 60 80 100 120 °C 160
T
A
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.28
0.32
W
0.38 BSS 83 P
P
tot
Transient thermal impedance
Z
thJC =
f
(
t
p)
parameter :
D
=
t
p/
T
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
BSS 83 P
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Safe operating area
I
D =
f
(
V
DS )
parameter :
D
= 0 ,
T
A = 25 °C
-10 -1 -10 0 -10 1 -10 2
V
V
DS
-3
-10
-2
-10
-1
-10
0
-10
1
-10
A
BSS 83 P
I
D
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 µs
t
p = 88.0µs
2012-03-30
Rev. 1.5 Page 6
BSS 83 P
Typ. drain-source-on-resistance
R
DS(on) =
f
(
I
D)
parameter:
V
GS
0.00 -0.10 -0.20 -0.30 -0.40 -0.50 A-0.65
I
D
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.5 BSS 83 P
R
DS(on)
a
V
GS [V] =
a
-2.5
b
b
-3.0
c
c
-3.5
d
d
-4.0
e
e
-4.5
f
f
-5.0
g
g
-5.5
h
h
-6.0
i
i
-6.5
j
j
-7.0
k
k
-8.0
l
l
-10.0
Typ. output characteristic
I
D =
f
(
V
DS);
T
j=25°C
parameter:
t
p = 80 µs
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V-5.0
V
DS
0.00
-0.10
-0.20
-0.30
-0.40
-0.50
-0.60
A
-0.80
BSS 83 P
I
D
V
GS [V]
a
a -2.5
b
b -3.0
c
c -3.5
d
d -4.0
e
e -4.5
f
f -5.0
g
g -5.5
h
h -6.0
i
i -6.5
j
j -7.0
k
k -8.0
l
P
tot = 0W
l -10.0
Typ. transfer characteristics
I
D=
f
(
V
GS )
V
DS 2 x
I
D x
R
DS(on)max
parameter:
t
p = 80 µs
0.0 -1.0 -2.0 -3.0 -4.0 V-6.0
V
GS
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
A
-1.2
I
D
Typ. forward transconductance
g
fs = f(
I
D);
T
j=25°C
parameter:
g
fs
0.00 -0.10 -0.20 -0.30 -0.40 -0.50 A-0.70
ID
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
S
0.70
gfs
2012-03-30
Rev. 1.5 Page 7
BSS 83 P
Drain-source on-state resistance
R
DS(on) =
f
(
T
j)
parameter :
I
D = -0.33 A,
V
GS = -10 V
-60 -20 20 60 100 °C 180
T
j
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.5
BSS 83 P
R
DS(on)
typ
98%
Gate threshold voltage
V
GS(th) =
f
(
T
j)
parameter:
V
GS =
V
DS,
I
D = -80 µA
-60 -20 20 60 100 °C 160
T
j
0.0
-0.5
-1.0
-1.5
-2.0
V
-3.0
V
GS(th)
2%
-60 -20 20 60 100 °C 160
T
j
0.0
-0.5
-1.0
-1.5
-2.0
V
-3.0
V
GS(th)
typ
-60 -20 20 60 100 °C 160
T
j
0.0
-0.5
-1.0
-1.5
-2.0
V
-3.0
V
GS(th)
98%
-60 -20 20 60 100 °C 160
T
j
0.0
-0.5
-1.0
-1.5
-2.0
V
-3.0
V
GS(th)
Typ. capacitances
C
=
f
(
V
DS)
parameter:
V
GS=0V,
f
=1 MHz
0 -5 -10 -15 -20 -25 V-35
V
DS
0
10
1
10
2
10
3
10
pF
C
C
iss
C
oss
C
rss
Forward characteristics of reverse diode
I
F =
f
(VSD)
parameter:
T
j , tp = 80 µs
0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V-3.0
V
SD
-2
-10
-1
-10
0
-10
1
-10
A
BSS 83 P
I
F
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 150 °C typ
T
j = 150 °C (98%)
2012-03-30
Rev. 1.5 Page 8
BSS 83 P
Avalanche energy
E
AS =
f
(
T
j)
para.:
I
D = -0.33 A ,
V
DD = -25 V,
R
GS = 25
25 45 65 85 105 125 °C 165
T
j
0
1
2
3
4
5
6
7
8
mJ
10
E
AS
Typ. gate charge
V
GS =
f
(
Q
Gate)
parameter:
I
D = -0.33 A pulsed
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 nC 3.4
Q
Gate
0
-2
-4
-6
-8
-10
-12
V
-16
BSS 83 P
V
GS
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V
(BR)DSS =
f
(
T
j)
-60 -20 20 60 100 °C 180
T
j
-54
-56
-58
-60
-62
-64
-66
-68
V
-72
BSS 83 P
V
(BR)DSS
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
2012-03-30
Rev. 1.5 Page 8
BSS 83 P

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