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BGA725L6

Infineon Technologies

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RF & Protection Devices
Data Sheet
Revision 2.0, 2012-03-09
Preliminary
BGA725L6
Silicon Germanium Low Noise Amplifier
for Global Navigation Satellite Systems (GNSS)
in ultra small package with 0.77mm² footprint
Edition 2012-03-09
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BGA725L6
Preliminary Data Sheet 3 Revision 2.0, 2012-03-09
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANI ZATION FOR STANDARDIZATION. MATLAB™
of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Revision History
Page or Item Subjects (major changes since previous revision)
Revision 2.0, 2012-03-09
all “Target” status changed to “Preliminary”
7 Marking code changed: C
7, 10, 11 Electrical Characteristics adjusted
Revision 1.0, 2011-07-05
all Initial version
BGA725L6
Table of Contents
Preliminary Data Sheet 4 Revision 2.0, 2012-03-09
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table of Contents
BGA725L6
List of Figures
Preliminary Data Sheet 5 Revision 2.0, 2012-03-09
Figure 1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 2 Application Schematic BGA725L6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 3 Drawing of Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 4 Application Board Cross-Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 5 TSLP-6-2 Package Outline (top, side and bottom views) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 6 Footprint TSLP-6-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 7 Marking Layout (top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 8 Tape & Reel Dimensions (reel diameter 180 mm, pieces/reel 15000) . . . . . . . . . . . . . . . . . . . . . . 15
List of Figures
BGA725L6
List of Tables
Preliminary Data Sheet 6 Revision 2.0, 2012-03-09
Table 1 Pin Definition and Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 4 Electrical Characteristics: TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V,
f= 1550 - 1615 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 5 Electrical Characteristics: TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V,
f= 1550 - 1615 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 6 Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
List of Tables
Product Name Marking Package
BGA725L6 DTSLP-6-2
Silicon Germanium Low Noise Amplifier
for Global Navigation Satellite Systems (GNSS)
in ultra small package with 0.77mm² footprint
BGA725L6
Preliminary Data Sheet 7 Revision 2.0, 2012-03-09
Features
High insertion power gain: 20.0 dB
Out-of-band input 3rd order intercept point: -2 dBm
Input 1 dB compression point: -15 dBm
Low noise figure: 0.65 dB
Low current consumption: 3.6 mA
Operating frequencies: 1550 - 1615 MHz
Supply voltage: 1.5 V to 3.6 V
Digital on/off switch (1V logic high level)
Ultra small TSLP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
B7HF Silicon Germanium technology
RF output internally matched to 50 Ω
Only 1 external SMD component necessary
2kV HBM ESD protection (including AI-pin)
Pb-free (RoHS compliant) package
Application
Ideal for all Global Navigation Satellite Systems (GNSS) like GPS, GLONASS, Beidou, Galileo and others.
Figure 1 Block Diagram
BGA725L6_Blockdiagram .vsd
AI AO
GNDRF
PONVCC
ESD
GND
BGA725L6
Features
Preliminary Data Sheet 8 Revision 2.0, 2012-03-09
Description
The BGA725L6 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz
to 1615 MHz like GPS, GLONASS, Beidou, Galileo and others. The LNA provides 20.0 dB gain and 0.65 dB noise
figure at a current consumption of 3.6 mA in the application configuration described in Chapter 3. The BGA725L6
is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply
voltage.
Pin Definition and Function
Table 1 Pin Definition and Function
Pin No. Name Function
1 GND General ground
2 VCC DC supply
3 AO LNA output
4 GNDRF LNA RF ground
5 AI LNA input
6 PON Power on control
BGA725L6
Maximum Ratings
Preliminary Data Sheet 9 Revision 2.0, 2012-03-09
1 Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Thermal Resistance
Table 2 Maximum Ratings
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Voltage at pin VCC VCC -0.3 3.6 V 1)
1) All voltages refer to GND-Node unless otherwise noted
Voltage at pin AI VAI -0.3 0.9 V –
Voltage at pin AO VAO -0.3 – VCC + 0.3 V
Voltage at pin PON VPON -0.3 – VCC + 0.3 V
Voltage at pin GNDRF VGNDRF -0.3 0.3 V –
Current into pin VCC ICC ––20mA
RF input power PIN ––0dBm
Total power dissipation,
TS< 123 °C2)
2) TS is measured on the ground lead at the soldering point
Ptot ––72mW
Junction temperature TJ––150°C
Ambient temperature range TA-40 85 °C –
Storage temperature range TSTG -65 150 °C –
ESD capability all pins VESD_HBM 2000 V according to
JESD22A-114
Table 3 Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
1) For calculation of RthJA please refer to Application Note Thermal Resistance
RthJS 380 K/W
BGA725L6
Electrical Characteristics
Preliminary Data Sheet 10 Revision 2.0, 2012-03-09
2 Electrical Characteristics
Table 4 Electrical Characteristics:1) TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V,
f= 1550 - 1615 MHz (GPS / Glonass / Beidou / Galileo)
1) Based on the application described in chapter 3
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Supply voltage VCC 1.5 – 3.6 V
Supply current ICC –3.6–mAON-mode
–0.23μA OFF-mode
Power On voltage Vpon 1.0 Vcc V ON-mode
0 0.4 V OFF-mode
Power On current Ipon –5–μA ON-mode
––1μA OFF-mode
Insertion power gain |S21|2– 20.0 – dB
Noise figure2)
2) PCB losses are subtracted
NF –0.65–dBZS=50Ω
Input return loss RLin –14–dB
Output return loss RLout –20–dB
Reverse isolation 1/|S12|2–37–dB
Power gain settling time3)
3) To be within 1 dB of the final gain OFF- to ON-mode; to be within 3 dB of the final gain ON- to OFF-mode
tS–5–μs OFF- to ON-mode
–5–μs ON- to OFF-mode
Inband input 1dB-compression
point
IP1dB –-16–dBm
Inband input 3rd-order intercept
point4)
4) Input power = -30 dBm for each tone
IIP3–-6–dBmf1= 1575 MHz
f2=f1+/-1 MHz
Out-of-band input 3rd-order
intercept point5)
5) Input power = -20 dBm for each tone
IIP3oob –-5–dBmf1= 1712.7 MHz
f2= 1850 MHz
Stability k–> 1 f= 20 MHz ... 10 GHz
BGA725L6
Electrical Characteristics
Preliminary Data Sheet 11 Revision 2.0, 2012-03-09
Table 5 Electrical Characteristics:1) TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V,
f= 1550 - 1615 MHz (GPS / Glonass / Beidou / Galileo)
1) Based on the application described in chapter 3
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Supply voltage VCC 1.5 – 3.6 V
Supply current ICC –3.6–mAON-mode
–0.23μA OFF-mode
Power On voltage Vpon 1.0 Vcc V ON-mode
0 0.4 V OFF-mode
Power On current Ipon –5–μA ON-mode
––1μA OFF-mode
Insertion power gain |S21|2– 20.0 – dB
Noise figure2)
2) PCB losses are subtracted
NF –0.65–dBZS=50Ω
Input return loss RLin –14–dB
Output return loss RLout –20–dB
Reverse isolation 1/|S12|2–37–dB
Power gain settling time3)
3) To be within 1 dB of the final gain OFF- to ON-mode; to be within 3 dB of the final gain ON- to OFF-mode
tS–5–μs OFF- to ON-mode
–5–μs ON- to OFF-mode
Inband input 1dB-compression
point
IP1dB –-15–dBm
Inband input 3rd-order intercept
point4)
4) Input power = -30 dBm for each tone
IIP3–-5–dBmf1= 1575 MHz
f2=f1+/-1 MHz
Out-of-band input 3rd-order
intercept point5)
5) Input power = -20 dBm for each tone
IIP3oob –-2–dBmf1= 1712.7 MHz
f2= 1850 MHz
Stability k–> 1 f= 20 MHz ... 10 GHz
BGA725L6
Application Information
Preliminary Data Sheet 12 Revision 2.0, 2012-03-09
3 Application Information
Application Board Configuration
Figure 2 Application Schematic BGA725L6
A list of all application notes is available at http://www.infineon.com/gpslna.appnotes.
Table 6 Bill of Materials
Name Value Package Manufacturer Function
C1 (optional) 1nF 0402 Various DC block 1)
1) DC block might be realized with pre-filter in GNSS applications
C2 (optional) > 10nF2)
2) For data sheet characteristics 1μF used
0402 Various RF bypass 3)
3) RF bypass recommended to mitigate power supply noise
L1 7.5nH 0402 Murata LQW type Input matching
N1 BGA725L6 TSLP-6-2 Infineon SiGe LNA
BGA725L6_Schematic.vsd
N1 BGA725L6
AI, 5
PON, 6
GNDRF, 4
GND, 1
AO, 3
VCC, 2
C1
(optional)
L1
RFin
PON
VCC
C2
(optional)
RFout
BGA725L6
Application Information
Preliminary Data Sheet 13 Revision 2.0, 2012-03-09
Figure 3 Drawing of Application Board
Figure 4 Application Board Cross-Section
BGA725 L6_Application _Board.vsd
Copper
35µm
Vias Vias
Ro4003, 0.2mm
FR4,0.8mm
BGA 725L6_application _board _sideview.vsd
BGA725L6
Package Information
Preliminary Data Sheet 14 Revision 2.0, 2012-03-09
4 Package Information
Figure 5 TSLP-6-2 Package Outline (top, side and bottom views)
Figure 6 Footprint TSLP-6-2
Figure 7 Marking Layout (top view)
0.05 MAX.
±0.05
0.7
±0.035
0.2
±0.05
1)
±0.035
0.2
1)
0.2
1.1±0.05
1) Dimension applies to plated terminals
52
6
4
1
3
Top view Bottom view
Pin 1 marking
TSLP-6-2-PO V01
0.2±0.05
(0.05) (0.05)
(0.05)(0.05)
+0.01
0.39 -0.03
0.25
0.4
0.25
0.4
0.25
0.4
0.25
0.4
TSLP-6-2-FP V01
Stencil apertures
Copper Solder mask
(stencil thickness 100 µm)
NSMD
TS LP-6-2-MK BGA 725
Type code
Pin 1 marking
D
BGA725L6
Package Information
Preliminary Data Sheet 15 Revision 2.0, 2012-03-09
Figure 8 Tape & Reel Dimensions (reel diameter 180 mm, pieces/reel 15000)
Published by Infineon Technologies AG
www.infineon.com

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