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DMN1019USN Datasheet

Diodes Incorporated

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Datasheet

DMN1019USN
Document number: DS36999 Rev. 2 - 2
1 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMN1019USN
NEW PRODUCT
D
S
G
Gate Protection
Diode
12V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS R
DS(ON) MAX ID
T
A
= +25°C
12V
10m @ VGS = 4.5V 9.3A
12m @ VGS = 2.5V 8.5A
14m @ VGS = 1.8V 7.9A
18m @ VGS = 1.5V 6.9A
41m @ VGS = 1.2V 4.6A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Load Switch
DC-DC Converters
Power Management Functions
Features
Low On-Resistance
ESD Protected Gate
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SC59
Case Material – Molded Plastic. UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Weight: 0.014 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN1019USN-7 SC59 3,000/Tape & Reel
DMN1019USN-13 SC59 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2013 2014 2015 2016 2017 2018 2019 2020
Code A B C D E F G H
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
e3
D
GS
Top View
Pin Configuration
Top View
ESD PROTECTED
SC59
N7 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: A = 2013
M = Month ex: 9 = September
N7
Y
M
Equivalent Circuit
DMN1019USN
Document number: DS36999 Rev. 2 - 2
2 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMN1019USN
NEW PRODUCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 12 V
Gate-Source Voltage VGSS ±8 V
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C ID 9.3
7.4 A
t<10s TA = +25°C
TA = +70°C ID 11
8.8 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 70 A
Maximum Body Diode Forward Current (Note 6) IS 2 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) TA = +25°C PD 0.68 W
TA = +70°C 0.4
Thermal Resistance, Junction to Ambient (Note 5) Steady state RθJA 160 °C/W
t<10s 115 °C/W
Total Power Dissipation (Note 6) TA = +25°C PD 1.2 W
TA = +70°C 0.83
Thermal Resistance, Junction to Ambient (Note 6) Steady state RθJA 96 °C/W
t<10s 68 °C/W
Thermal Resistance, Junction to Case (Note 6) RθJC 18 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 12 V VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current IDSS 1 µA VDS =12V, VGS = 0V
Gate-Body Leakage IGSS ±2 µA VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS
(
th
)
0.35 0.53 0.8 V VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance RDS(ON)
7 10
m
VGS = 4.5V, ID = 9.7A
8 12 VGS = 2.5V, ID = 9A
10 14 VGS = 1.8V, ID = 8.1A
14 18 VGS = 1.5V, ID = 4.5A
28 41 VGS = 1.2V, ID = 2.4A
Forward Transfer Admittance IYfsI 28 S VDS = 4V, ID = 9.7A
Diode Forward Voltage VSD 0.8 1.2 V
VGS = 0V, IS = 10A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss 2426 pF VDS = 10V, VGS = 0V,
f = 1MHz
Output Capacitance Coss 396 pF
Reverse Transfer Capacitance Crss 375 pF
Gate Resistance R
g
1.1 VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 8V) Q
g
50.6
nC VDS = 4V, ID = 10A
Total Gate Charge (VGS = 4.5V) Q
g
27.3
Gate-Source Charge Q
g
s 3.4
Gate-Drain Charge Q
g
d 5.2
Turn-On Delay Time tD
(
ON
)
7.6 ns
VDD = 4V, VGEN = 5V, ID = 10A,
RG = 1, RL = 0.4
Turn-Off Delay Time tD
OFF
22.2 ns
Turn-On Rise Time t
r
57.6 ns
Turn-Off Fall Time tf 16.8 ns
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. The power dissipation PD is based on t<10s RθJA.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided. The power dissipation PD is based on t<10s RθJA.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN1019USN
Document number: DS36999 Rev. 2 - 2
3 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMN1019USN
NEW PRODUCT
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0.0
4.0
8.0
12.0
16.0
20.0
012345
V= 1.0V
GS
V= 8.0V
GS
V =1.2V
GS
V= 3.0V
GS
V= 2.0V
GS
V= 1.5V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
0
2
4
6
8
10
12
14
16
18
20
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
V= 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0.006
0.007
0.008
0.009
0.01
0.011
0.012
0.013
0.014
0.015
0.016
2468101214161820
V = 2.5V
GS
V = 4.5V
GS
V = 1.5V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristics
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
0
0.005
0.01
0.015
0.02
0.025
0.03
012345678
I = 9.7A
D
I = 8.1A
D
I = 4.5A
D
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0.005
0.006
0.007
0.008
0.009
0.01
0.011
0.012
0.013
0.014
0.015
0 2 4 6 8 101214161820
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
°
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
V=.5V
I= 4.5A
GS
D
1
V= V
I= 9A
GS
D
2.5
V= V
I= 9.7A
GS
D
4.5
DMN1019USN
Document number: DS36999 Rev. 2 - 2
4 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMN1019USN
NEW PRODUCT
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
°
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.02
-50 -25 0 25 50 75 100 125 150
V=.5V
I= 9A
GS
D
2
V= V
I= 9.7A
GS
D
4.5
V= V
I= 4.5A
GS
D
1.5
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
°
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(th)
0
0.2
0.4
0.6
0.8
-50 -25 0 25 50 75 100 125 150
I= 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
0
2
4
6
8
10
12
14
16
18
20
0 0.2 0.4 0.6 0.8 1 1.2
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = 25°C
A
T = -55°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
AN
C
E (pF)
T
100
1000
10000
024681012
f = 1MHz
C
iss
C
oss
C
rss
Q(nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS
0
2
4
6
8
0 5 10 15 20 25 30 35 40 45 50
V= 4V
I= A
DS
D
10
V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0.01
0.1
1
10
100
0.01 0.1 1
R
Limited
DS(on)
10 100
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
T = 150°C
T = 25°C
V = 10V
Single Pulse
J(max)
A
GS
DUT on 1 * MRP Board
DMN1019USN
Document number: DS36999 Rev. 2 - 2
5 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMN1019USN
NEW PRODUCT
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
R (t) = r(t) * R
R = 60°C/W
Duty Cycle, D = t1/ t2
θθ
θ
JA JA
JA
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SC59
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D - - 0.95
G - - 1.90
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
N 0.70 0.80 0.75
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 3.4
X 0.8
Y 1.0
C 2.4
E 1.35
A
M
JL
D
BC
H
K
G
N
X E
Y
C
Z
DMN1019USN
Document number: DS36999 Rev. 2 - 2
6 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMN1019USN
NEW PRODUCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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