Datenblatt für DRV5055-Q1 von Texas Instruments

1!. B X E I TEXAS INSTRUMENTS VLrM‘Nw
B
southnorth
OUT
0 mT
0 V
VCC
VL (MIN)
VL (MAX)
VCC / 2
OUT
DRV5055-Q1
VCC
Controller
VCC
GND
ADC
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
DRV5055-Q1
SBAS639C –OCTOBER 2017–REVISED JULY 2018
DRV5055-Q1 Automotive Ratiometric Linear Hall Effect Sensor
1
1 Features
1• Ratiometric Linear Hall Effect Magnetic Sensor
• Operates From 3.3-V and 5-V Power Supplies
• Analog Output With VCC / 2 Quiescent Offset
• Magnetic Sensitivity Options (At VCC = 5 V):
– A1: 100 mV/mT, ±21-mT Range
– A2: 50 mV/mT, ±42-mT Range
– A3: 25 mV/mT, ±85-mT Range
– A4: 12.5 mV/mT, ±169-mT Range
– A5: –100 mV/mT, ±21-mT Range
• Fast 20-kHz Sensing Bandwidth
• Low-Noise Output With ±1-mA Drive
• Compensation For Magnet Temperature Drift
• AEC-Q100 Qualified for Automotive Applications:
– Temperature Grade 0: –40°C to 150°C
• Standard Industry Packages:
– Surface-Mount SOT-23
– Through-Hole TO-92
2 Applications
• Automotive Position Sensing
• Brake, Acceleration, Clutch Pedals
• Torque Sensors, Gear Shifters
• Throttle Position, Height Leveling
• Powertrain and Transmission Components
• Absolute Angle Encoding
• Current Sensing
3 Description
The DRV5055-Q1 is a linear Hall effect sensor that
responds proportionally to magnetic flux density. The
device can be used for accurate position sensing in a
wide range of applications.
The device operates from 3.3-V or 5-V power
supplies. When no magnetic field is present, the
analog output drives half of VCC. The output changes
linearly with the applied magnetic flux density, and
five sensitivity options enable maximal output voltage
swing based on the required sensing range. North
and south magnetic poles produce unique voltages.
Magnetic flux perpendicular to the top of the package
is sensed, and the two package options provide
different sensing directions.
The device uses a ratiometric architecture that can
eliminate error from VCC tolerance when the external
analog-to-digital converter (ADC) uses the same VCC
for its reference. Additionally, the device features
magnet temperature compensation to counteract how
magnets drift for linear performance across a wide
–40°C to +150°C temperature range.
Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
DRV5055-Q1 SOT-23 (3) 2.92 mm × 1.30 mm
TO-92 (3) 4.00 mm × 3.15 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Typical Schematic Magnetic Response (A1, A2, A3, A4 Versions)
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Table of Contents
1 Features.................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Pin Configuration and Functions......................... 3
6 Specifications......................................................... 3
6.1 Absolute Maximum Ratings ...................................... 3
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 4
6.5 Electrical Characteristics........................................... 4
6.6 Magnetic Characteristics........................................... 5
6.7 Typical Characteristics.............................................. 6
7 Detailed Description.............................................. 9
7.1 Overview ................................................................... 9
7.2 Functional Block Diagram......................................... 9
7.3 Feature Description................................................... 9
7.4 Device Functional Modes........................................ 13
8 Application and Implementation ........................ 14
8.1 Application Information............................................ 14
8.2 Typical Application .................................................. 15
8.3 Do's and Don'ts ...................................................... 17
9 Power Supply Recommendations...................... 18
10 Layout................................................................... 18
10.1 Layout Guidelines ................................................. 18
10.2 Layout Examples................................................... 18
11 Device and Documentation Support ................. 19
11.1 Documentation Support ........................................ 19
11.2 Receiving Notification of Documentation Updates 19
11.3 Community Resources.......................................... 19
11.4 Trademarks........................................................... 19
11.5 Electrostatic Discharge Caution............................ 19
11.6 Glossary................................................................ 19
12 Mechanical, Packaging, and Orderable
Information ........................................................... 19
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (January 2018) to Revision C Page
• Released to production .......................................................................................................................................................... 1
TEXAS INSTRUMENTS Vcc GND OUT
GND OUTVCC
1 2 3
GND
VCC
OUT
1
2
3
3
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5 Pin Configuration and Functions
DBZ Package
3-Pin SOT-23
Top View
LPG Package
3-Pin TO-92
Top View
Pin Functions
PIN I/O DESCRIPTION
NAME SOT-23 TO-92
VCC 1 1 — Power supply. TI recommends connecting this pin to a ceramic capacitor to ground
with a value of at least 0.01 µF.
OUT 2 3 O Analog output
GND 3 2 — Ground reference
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Power supply voltage VCC –0.3 7 V
Output voltage OUT –0.3 VCC + 0.3 V
Magnetic flux density, BMAX Unlimited T
Operating junction temperature, TJ–40 170 °C
Storage temperature, Tstg –65 150 °C
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(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.2 ESD Ratings
VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002(1) ±2500 V
Charged device model (CDM), per AEC Q100-011 ±750
(1) There are two isolated operating VCC ranges. For more information see the Operating VCC Ranges section.
(2) Power dissipation and thermal limits must be observed.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC Power-supply voltage(1) 3 3.63 V
4.5 5.5
IOOutput continuous current –1 1 mA
TAOperating ambient temperature(2) –40 150 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC(1)
DRV5055-Q1
UNITSOT-23 (DBZ) TO-92 (LPG)
3 PINS 3 PINS
RθJA Junction-to-ambient thermal resistance 170 121 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 66 67 °C/W
RθJB Junction-to-board thermal resistance 49 97 °C/W
YJT Junction-to-top characterization parameter 1.7 7.6 °C/W
YJB Junction-to-board characterization parameter 48 97 °C/W
(1) B is the applied magnetic flux density.
(2) VNdescribes voltage noise on the device output. If the full device bandwidth is not needed, noise can be reduced with an RC filter.
6.5 Electrical Characteristics
for VCC = 3 V to 3.63 V and 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT
ICC Operating supply current 6 10 mA
tON Power-on time (see Figure 18) B = 0 mT, no load on OUT 175 330 µs
fBW Sensing bandwidth 20 kHz
tdPropagation delay time From change in B to change in OUT 10 µs
BND Input-referred RMS noise density VCC = 5 V 130 nT/√Hz
VCC = 3.3 V 215
BNInput-referred noise BND × 6.6 × √20 kHz VCC = 5 V 0.12 mTPP
VCC = 3.3 V 0.2
VNOutput-referred noise(2) BN× S
DRV5055A1,
DRV5055A5 12
mVPP
DRV5055A2 6
DRV5055A3 3
DRV5055A4 1.5
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(1) B is the applied magnetic flux density.
(2) See the Ratiometric Architecture section.
(3) BLdescribes the minimum linear sensing range at 25°C taking into account the maximum VQand Sensitivity tolerances.
(4) See the Sensitivity Linearity section.
(5) STC describes the rate the device increases Sensitivity with temperature. For more information, see the Sensitivity Temperature
Compensation for Magnets section.
6.6 Magnetic Characteristics
for VCC = 3 V to 3.63 V and 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT
VQQuiescent voltage B = 0 mT, TA= 25°C VCC = 5 V 2.43 2.5 2.57 V
VCC = 3.3 V 1.59 1.65 1.71
VQΔTQuiescent voltage temperature drift B = 0 mT,
TA= –40°C to 150°C versus 25°C ±1% × VCC V
VQRE Quiescent voltage ratiometry error(2) ±0.2%
VQΔLQuiescent voltage lifetime drift High-temperature operating stress for
1000 hours < 0.5%
S Sensitivity
VCC = 5 V,
TA= 25°C
DRV5055A1 95 100 105
mV/mT
DRV5055A2 47.5 50 52.5
DRV5055A3 23.8 25 26.2
DRV5055A4 11.9 12.5 13.2
DRV5055A5 –105 –100 –95
VCC = 3.3 V,
TA= 25°C
DRV5055A1 57 60 63
DRV5055A2 28.5 30 31.5
DRV5055A3 14.3 15 15.8
DRV5055A4 7.1 7.5 7.9
DRV5055A5 –63 –60 –57
BLLinear magnetic sensing range(3) (4)
VCC = 5 V,
TA= 25°C
DRV5055A1,
DRV5055A5 ±21
mT
DRV5055A2 ±42
DRV5055A3 ±85
DRV5055A4 ±169
VCC = 3.3 V,
TA= 25°C
DRV5055A1,
DRV5055A5 ±22
DRV5055A2 ±44
DRV5055A3 ±88
DRV5055A4 ±176
VLLinear range of output voltage(4) 0.2 VCC – 0.2 V
STC Sensitivity temperature compensation
for magnets(5) 0.12 %/°C
SLE Sensitivity linearity error(4) VOUT is within VL±1%
SSE Sensitivity symmetry error(4) VOUT is within VL±1%
SRE Sensitivity ratiometry error(2) TA= 25°C,
with respect to VCC = 3.3 V or 5 V –2.5% 2.5%
SΔLSensitivity lifetime drift High-temperature operating stress for
1000 hours <0.5%
l TEXAS INSTRUMENTS Sum 2300 120
Supply Voltage (V)
Sensitivity (mV/mT)
3 3.15 3.3 3.45 3.6
0
10
20
30
40
50
60
70
Fig3
A1, A5
A2
A3
A4
Supply Voltage (V)
Sensitivity (mV/mT)
4.5 4.6 4.7 4.8 4.9 5 5.1 5.2 5.3 5.4 5.5
10
20
30
40
50
60
70
80
90
100
110
120
Fig4
A1, A5
A2
A3
A4
Temperature (qC)
Voltage (mV)
-40 -20 0 20 40 60 80 100 120 140 160
1000
1500
2000
2500
3000
Fig1
3.3V
5.0V
VCC (V)
Quiescent Voltage (mV)
3 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25 5.5
1400
1600
1800
2000
2200
2400
2600
2800
Fig2
6
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6.7 Typical Characteristics
for TA= 25°C (unless otherwise noted)
Figure 1. Quiescent Voltage vs Temperature Figure 2. Quiescent Voltage vs Supply Voltage
VCC = 3.3 V
Figure 3. Sensitivity vs Supply Voltage
VCC = 5.0 V
Figure 4. Sensitivity vs Supply Voltage
Figure 5. Supply Current vs Temperature
DRV5055A1, DRV5055A5, VCC = 3.3 V
Figure 6. Sensitivity vs Temperature
l TEXAS INSTRUMENTS 125 40 lo 23"
Temperature (C)
Y Axis Title (Unit)
-40 -20 0 20 40 60 80 100 120 140 160
15
20
25
30
35
40
Fig1
AVG
-3STD
+3STD
Temperature (qC)
Sensitivity (mV/mT)
-40 -20 0 20 40 60 80 100 120 140 160
0
2
4
6
8
10
Fig1Fig1Fig1
AVG
-3STD
+3STD
Temperature (qC)
Sensitivity (mV/mT)
-40 -20 0 20 40 60 80 100 120 140 160
25
30
35
40
45
50
55
60
65
70
75
Fig9
AVG
-3STD
+3STD
Temperature (qC)
Sensitivity (mV/mT)
-40 -20 0 20 40 60 80 100 120 140 160
0
5
10
15
20
25
Fig1
AVG
-3STD
+3STD
Temperature (qC)
Sensitivity (mV/mT)
-40 -20 0 20 40 60 80 100 120 140 160
75
80
85
90
95
100
105
110
115
120
125
Fig7
AVG
-3STD
+3STD
7
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Typical Characteristics (continued)
for TA= 25°C (unless otherwise noted)
DRV5055A1, DRV5055A5, VCC = 5.0 V
Figure 7. Sensitivity vs Temperature
DRV5055A2, VCC = 3.3 V
Figure 8. Sensitivity vs Temperature
DRV5055A2, VCC = 5.0 V
Figure 9. Sensitivity vs Temperature
DRV5055A3, VCC = 3.3 V
Figure 10. Sensitivity vs Temperature
DRV5055A3, VCC = 5.0 V
Figure 11. Sensitivity vs Temperature
DRV5055A4, VCC = 3.3 V
Figure 12. Sensitivity vs Temperature
l TEXAS INSTRUMENTS Ia l \ \\\
Temperature (qC)
Sensitivity (mV/mT)
-40 -20 0 20 40 60 80 100 120 140 160
8
10
12
14
16
18
Fig1
AVG
-3STD
+3STD
8
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Typical Characteristics (continued)
for TA= 25°C (unless otherwise noted)
DRV5055A4, VCC = 5.0 V
Figure 13. Sensitivity vs Temperature
fl; TEXAS INSTRUMENTS SB
PCB
SOT-23
B
B
TO-92
0.01 F
(minimum)
VCC
Output
Driver OUT
GND
VCC
Optional filter
Element Bias
Offset
Cancellation
Temperature
Compensation
Precision
Amplifier
Bandgap
Reference
Trim
Registers
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7 Detailed Description
7.1 Overview
The DRV5055-Q1 is a 3-pin linear Hall effect sensor with fully integrated signal conditioning, temperature
compensation circuits, mechanical stress cancellation, and amplifiers. The device operates from 3.3-V and 5-V
(±10%) power supplies, measures magnetic flux density, and outputs a proportional analog voltage that is
referenced to VCC.
7.2 Functional Block Diagram
7.3 Feature Description
7.3.1 Magnetic Flux Direction
As shown in Figure 14, the DRV5055-Q1 is sensitive to the magnetic field component that is perpendicular to the
top of the package.
Figure 14. Direction of Sensitivity
I TEXAS INSTRUMENTS
VOUT = VQ + B × Sensitivity(25° C) × (1 + STC × (TA ± 25° C))
()
PCBPCB
N
S
NS
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Feature Description (continued)
Magnetic flux that travels from the bottom to the top of the package is considered positive in this document. This
condition exists when a south magnetic pole is near the top (marked-side) of the package. Magnetic flux that
travels from the top to the bottom of the package results in negative millitesla values.
Figure 15. The Flux Direction for Positive B
7.3.2 Magnetic Response
When the DRV5055-Q1 is powered, the DRV5055-Q1 outputs an analog voltage according to Equation 1:
where
• VQis typically half of VCC
• B is the applied magnetic flux density
• Sensitivity(25°C) depends on the device option and VCC
• STC is typically 0.12%/°C
• TAis the ambient temperature
• VOUT is within the VLrange (1)
As an example, consider the DRV5055A3 with VCC = 3.3 V, a temperature of 50°C, and 67 mT applied.
Excluding tolerances, VOUT = 1650 mV + 67 mT × (15 mV/mT × (1 + 0.0012/°C × (50°C – 25°C))) = 2685 mV.
7.3.3 Sensitivity Linearity
The device produces a linear response when the output voltage is within the specified VLrange. Outside this
range, sensitivity is reduced and nonlinear. Figure 16 and Figure 17 graph the magnetic response.
l TEXAS INSTRUMENTS
VL(MAX) ± VQ(MAX)
S(MAX)
BL(MIN) =
B
southnorth
OUT
0 mT
0 V
VCC
VL (MIN)
VL (MAX)
VCC / 2
B
southnorth
OUT
0 mT
0 V
VCC
VL (MIN)
VL (MAX)
VCC / 2
11
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Feature Description (continued)
Figure 16. Magnetic Response of the A1, A2, A3, A4 Versions
Figure 17. Magnetic Response of the A5 Version
Equation 2 calculates parameter BL, the minimum linear sensing range at 25°C taking into account the maximum
quiescent voltage and sensitivity tolerances.
(2)
The parameter SLE defines linearity error as the difference in sensitivity between any two positive B values, and
any two negative B values, while the output is within the VLrange.
The parameter SSE defines symmetry error as the difference in sensitivity between any positive B value and the
negative B value of the same magnitude, while the output voltage is within the VLrange.
7.3.4 Ratiometric Architecture
The DRV5055-Q1 has a ratiometric analog architecture that scales the quiescent voltage and sensitivity linearly
with the power-supply voltage. For example, the quiescent voltage and sensitivity are 5% higher when VCC =
5.25 V compared to VCC = 5 V. This behavior enables external ADCs to digitize a consistent value regardless of
the power-supply voltage tolerance, when the ADC uses VCC as its reference.
l TEXAS INSTRUMENTS cc cc cc
VCC
time
3 V tON
Output
time
95% × VQ
Invalid
VQ(VCC) / VQ(3.3V)
1 ±VCC / 3.3V
VQRE = for VCC = 3 V to 3.63 V
VQ(VCC) / VQ(5V)
1 ±VCC / 5V
VQRE = for VCC = 4.5 V to 5.5 V,
S(VCC) / S(3.3V)
1 ±VCC / 3.3V
SRE = for VCC = 3 V to 3.63 V
S(VCC) / S(5V)
1 ±VCC / 5V
SRE = for VCC = 4.5 V to 5.5 V,
12
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Feature Description (continued)
Equation 3 calculates the sensitivity ratiometry error:
where
• S(VCC) is the sensitivity at the current VCC voltage
• S(5V) or S(3.3V) is the sensitivity when VCC = 5 V or 3.3 V
• VCC is the current VCC voltage (3)
Equation 4 calculates quiescent voltage ratiometry error:
where
• VQ(VCC) is the quiescent voltage at the current VCC voltage
• VQ(5V) or VQ(3.3V) is the quiescent voltage when VCC = 5 V or 3.3 V
• VCC is the current VCC voltage (4)
7.3.5 Operating VCC Ranges
The DRV5055-Q1 has two recommended operating VCC ranges: 3 V to 3.63 V and 4.5 V to 5.5 V. When VCC is
in the middle region between 3.63 V to 4.5 V, the device continues to function, but sensitivity is less known
because there is a crossover threshold near 4 V that adjusts device characteristics.
7.3.6 Sensitivity Temperature Compensation for Magnets
Magnets generally produce weaker fields as temperature increases. The DRV5055-Q1 compensates by
increasing sensitivity with temperature, as defined by the parameter STC. The sensitivity at TA= 125°C is typically
12% higher than at TA= 25°C. The DRV5055A5 absolute value of sensitivity increases with temperature.
7.3.7 Power-On Time
After the VCC voltage is applied, the DRV5055-Q1 requires a short initialization time before the output is set. The
parameter tON describes the time from when VCC crosses 3 V until OUT is within 5% of VQ, with 0 mT applied
and no load attached to OUT. Figure 18 shows this timing diagram.
Figure 18. tON Definition
IIIIIIIIIIIIIIIII \\\\\
SOT-23
Top View
TO-92
Top View
650 µm
±80 µm
SOT-23
Side View
centered
±50 µm
1.61 mm
1.54 mm
2 mm 2 mm
±50 µm 1030 µm
±115 µm
TO-92
Side View
13
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Feature Description (continued)
7.3.8 Hall Element Location
Figure 19 shows the location of the sensing element inside each package option.
Figure 19. Hall Element Location
7.4 Device Functional Modes
The DRV5055-Q1 has one mode of operation that applies when the Recommended Operating Conditions are
met.
I TEXAS INSTRUMENTS
OUT
DRV5055-Q1
VCC
GND
VCC
Cable
PCB
VOUT
14
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
8.1.1 Selecting the Sensitivity Option
Select the highest DRV5055-Q1 sensitivity option that can measure the required range of magnetic flux density,
so that the output voltage swing is maximized.
Larger-sized magnets and farther sensing distances can generally enable better positional accuracy than very
small magnets at close distances, because magnetic flux density increases exponentially with the proximity to a
magnet. TI created an online tool to help with simple magnet calculations at http://www.ti.com/product/drv5013.
8.1.2 Temperature Compensation for Magnets
The DRV5055-Q1 temperature compensation is designed to directly compensate the average drift of neodymium
(NdFeB) magnets and partially compensate ferrite magnets. The residual induction (Br) of a magnet typically
reduces by 0.12%/°C for NdFeB, and 0.20%/°C for ferrite. When the operating temperature of a system is
reduced, temperature drift errors are also reduced.
8.1.3 Adding a Low-Pass Filter
As shown in the Functional Block Diagram, an RC low-pass filter can be added to the device output for the
purpose of minimizing voltage noise when the full 20-kHz bandwidth is not needed. This filter can improve the
signal-to-noise ratio (SNR) and overall accuracy. Do not connect a capacitor directly to the device output without
a resistor in between because doing so can make the output unstable.
8.1.4 Designing for Wire Break Detection
Some systems must detect if interconnect wires become open or shorted. The DRV5055-Q1 can support this
function.
First, select a sensitivity option that causes the output voltage to stay within the VLrange during normal
operation. Second, add a pullup resistor between OUT and VCC. TI recommends a value between 20 kΩto
100 kΩ, and the current through OUT must not exceed the IOspecification, including current going into an
external ADC. Then, if the output voltage is ever measured to be within 150 mV of VCC or GND, a fault condition
exists. Figure 20 shows the circuit, and Table 1 describes fault scenarios.
Figure 20. Wire Fault Detection Circuit
l TEXAS INSTRUMENTS
S N
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Table 1. Fault Scenarios and the Resulting VOUT
FAULT SCENARIO VOUT
VCC disconnects Close to GND
GND disconnects Close to VCC
VCC shorts to OUT Close to VCC
GND shorts to OUT Close to GND
8.2 Typical Application
Figure 21. Common Magnet Orientation
8.2.1 Design Requirements
Use the parameters listed in Table 2 for this design example.
Table 2. Design Parameters
DESIGN PARAMETER EXAMPLE VALUE
VCC 5 V
Magnet 15 × 5 × 5 mm NdFeB
Travel distance 12 mm
Maximum B at the sensor at 25°C ±75 mT
Device option DRV5055A3
8.2.2 Detailed Design Procedure
Linear Hall effect sensors provide flexibility in mechanical design, because many possible magnet orientations
and movements produce a usable response from the sensor. Figure 21 shows one of the most common
orientations, which uses the full north to south range of the sensor and causes a close-to-linear change in
magnetic flux density as the magnet moves across.
When designing a linear magnetic sensing system, always consider these three variables: the magnet, sensing
distance, and the range of the sensor. Select the DRV5055-Q1 with the highest sensitivity that has a BL(linear
magnetic sensing range) that is larger than the maximum magnetic flux density in the application. To determine
the magnetic flux density the sensor receives, TI recommends using magnetic field simulation software, referring
to magnet specifications, and testing.
l TEXAS INSTRUMENTS >380 mT 35E! — 39: mT 34D — 333 mT 320 — 340 mT BUD , 320 mT 28E] — 3m mT 250 — 25] mT 240 , 280 mT 220 — 24D mT ZUD — 220 mT 130 — 2W mT 1GB — 180 mT 140 — 163 mT 120 - NU mT 100 — 120 mT BU — 100 mT BU — 80 mT 40 - 50 mT 20 — AU mT <20 mt="" density="" pht:="" ibi="">
16
DRV5055-Q1
SBAS639C –OCTOBER 2017–REVISED JULY 2018
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Product Folder Links: DRV5055-Q1
Submit Documentation Feedback Copyright © 2017–2018, Texas Instruments Incorporated
8.2.3 Application Curve
Figure 22 shows the simulated magnetic flux from a NdFeB magnet.
Figure 22. Simulated Magnetic Flux
{L} TEXAS INSTRUMENTS
CORRECT
S
N
INCORRECT
S
N
SN
SN
17
DRV5055-Q1
www.ti.com
SBAS639C –OCTOBER 2017–REVISED JULY 2018
Product Folder Links: DRV5055-Q1
Submit Documentation FeedbackCopyright © 2017–2018, Texas Instruments Incorporated
8.3 Do's and Don'ts
Because the Hall element is sensitive to magnetic fields that are perpendicular to the top of the package, a
correct magnet approach must be used for the sensor to detect the field. Figure 23 shows correct and incorrect
approaches.
Figure 23. Correct and Incorrect Magnet Approaches
‘5‘ TEXAS INSTRUMENTS + +
GND
VCC
OUT
GND OUTVCC
18
DRV5055-Q1
SBAS639C –OCTOBER 2017–REVISED JULY 2018
www.ti.com
Product Folder Links: DRV5055-Q1
Submit Documentation Feedback Copyright © 2017–2018, Texas Instruments Incorporated
9 Power Supply Recommendations
A decoupling capacitor close to the device must be used to provide local energy with minimal inductance. TI
recommends using a ceramic capacitor with a value of at least 0.01 µF.
10 Layout
10.1 Layout Guidelines
Magnetic fields pass through most nonferromagnetic materials with no significant disturbance. Embedding Hall
effect sensors within plastic or aluminum enclosures and sensing magnets on the outside is common practice.
Magnetic fields also easily pass through most printed-circuit boards, which makes placing the magnet on the
opposite side possible.
10.2 Layout Examples
Figure 24. Layout Examples
l TEXAS INSTRUMENTS
19
DRV5055-Q1
www.ti.com
SBAS639C –OCTOBER 2017–REVISED JULY 2018
Product Folder Links: DRV5055-Q1
Submit Documentation FeedbackCopyright © 2017–2018, Texas Instruments Incorporated
11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation see the following:
•Using Linear Hall Effect Sensors to Measure Angle
•Incremental Rotary Encoder Design Considerations
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.6 Glossary
SLYZ022 —TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
I TEXAS INSTRUMENTS Samples Samples Samples Samples Samples Sample: Sample: Samples Samples Samples Samples Samples
PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead finish/
Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
DRV5055A1EDBZRQ1 ACTIVE SOT-23 DBZ 3 3000 RoHS & Green SN Level-3-260C-168 HR -40 to 150 55A1Z
DRV5055A1ELPGMQ1 ACTIVE TO-92 LPG 3 3000 RoHS & Green SN N / A for Pkg Type -40 to 150 55A1Z
DRV5055A1ELPGQ1 ACTIVE TO-92 LPG 3 1000 RoHS & Green SN N / A for Pkg Type -40 to 150 55A1Z
DRV5055A2EDBZRQ1 ACTIVE SOT-23 DBZ 3 3000 RoHS & Green SN Level-3-260C-168 HR -40 to 150 55A2Z
DRV5055A2ELPGMQ1 ACTIVE TO-92 LPG 3 3000 RoHS & Green SN N / A for Pkg Type -40 to 150 55A2Z
DRV5055A2ELPGQ1 ACTIVE TO-92 LPG 3 1000 RoHS & Green SN N / A for Pkg Type -40 to 150 55A2Z
DRV5055A3EDBZRQ1 ACTIVE SOT-23 DBZ 3 3000 RoHS & Green SN Level-3-260C-168 HR -40 to 150 55A3Z
DRV5055A3ELPGMQ1 ACTIVE TO-92 LPG 3 3000 RoHS & Green SN N / A for Pkg Type -40 to 150 55A3Z
DRV5055A3ELPGQ1 ACTIVE TO-92 LPG 3 1000 RoHS & Green SN N / A for Pkg Type -40 to 150 55A3Z
DRV5055A4EDBZRQ1 ACTIVE SOT-23 DBZ 3 3000 RoHS & Green SN Level-3-260C-168 HR -40 to 150 55A4Z
DRV5055A4ELPGMQ1 ACTIVE TO-92 LPG 3 3000 RoHS & Green SN N / A for Pkg Type -40 to 150 55A4Z
DRV5055A4ELPGQ1 ACTIVE TO-92 LPG 3 1000 RoHS & Green SN N / A for Pkg Type -40 to 150 55A4Z
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
I TEXAS INSTRUMENTS
PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
Addendum-Page 2
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF DRV5055-Q1 :
•Catalog: DRV5055
NOTE: Qualified Version Definitions:
•Catalog - TI's standard catalog product
I TEXAS INSTRUMENTS REEL DIMENSIONS TAPE DIMENSIONS 7 “KO '«m» Reel Diameter AD Dimension destgned to accommodate the component with ED Dimension destgned to accommodate the component \engm K0 Dimenslun destgneo to accommodate the component thickness , w OveraH wtdm loe earner tape i p1 Pitch between successwe cavuy cemers f T Reel Width (W1) QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE O O O D O O D D SprocketHules ,,,,,,,,,,, ‘ User Direcllon 0' Feed Pockel Quadrams
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
DRV5055A1EDBZRQ1 SOT-23 DBZ 3 3000 180.0 8.4 3.15 2.77 1.22 4.0 8.0 Q3
DRV5055A2EDBZRQ1 SOT-23 DBZ 3 3000 180.0 8.4 3.15 2.77 1.22 4.0 8.0 Q3
DRV5055A3EDBZRQ1 SOT-23 DBZ 3 3000 180.0 8.4 3.15 2.77 1.22 4.0 8.0 Q3
DRV5055A4EDBZRQ1 SOT-23 DBZ 3 3000 180.0 8.4 3.15 2.77 1.22 4.0 8.0 Q3
PACKAGE MATERIALS INFORMATION
www.ti.com 19-Jan-2019
Pack Materials-Page 1
I TEXAS INSTRUMENTS TAPE AND REEL BOX DIMENSIONS
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
DRV5055A1EDBZRQ1 SOT-23 DBZ 3 3000 213.0 191.0 35.0
DRV5055A2EDBZRQ1 SOT-23 DBZ 3 3000 213.0 191.0 35.0
DRV5055A3EDBZRQ1 SOT-23 DBZ 3 3000 213.0 191.0 35.0
DRV5055A4EDBZRQ1 SOT-23 DBZ 3 3000 213.0 191.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 19-Jan-2019
Pack Materials-Page 2
GENERIC PACKAGE VIEW D32 3 SOT-23 - 1.12 mm max heigm SMALL OUTLINE TRANSISTOR Images above are jusl a represenlalion of the package family, aclual package may vary Refel lo the product dala sheel for package details. I TEXAS INSTRI IMFNTS
4203227/C
I-III
www.ti.com
PACKAGE OUTLINE
C
TYP
0.20
0.08
0.25
2.64
2.10 1.12 MAX
TYP
0.10
0.01
3X 0.5
0.3
TYP
0.6
0.2
1.9
0.95
TYP-80
A
3.04
2.80
B
1.4
1.2
(0.95)
SOT-23 - 1.12 mm max heightDBZ0003A
SMALL OUTLINE TRANSISTOR
4214838/C 04/2017
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Reference JEDEC registration TO-236, except minimum foot length.
0.2 C A B
1
3
2
INDEX AREA
PIN 1
GAGE PLANE
SEATING PLANE
0.1 C
SCALE 4.000
www.ti.com
EXAMPLE BOARD LAYOUT
0.07 MAX
ALL AROUND 0.07 MIN
ALL AROUND
3X (1.3)
3X (0.6)
(2.1)
2X (0.95)
(R0.05) TYP
4214838/C 04/2017
SOT-23 - 1.12 mm max heightDBZ0003A
SMALL OUTLINE TRANSISTOR
NOTES: (continued)
4. Publication IPC-7351 may have alternate designs.
5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
SYMM
LAND PATTERN EXAMPLE
SCALE:15X
PKG
1
3
2
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
SOLDER MASK
DEFINED
METAL
SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
www.ti.com
EXAMPLE STENCIL DESIGN
(2.1)
2X(0.95)
3X (1.3)
3X (0.6)
(R0.05) TYP
SOT-23 - 1.12 mm max heightDBZ0003A
SMALL OUTLINE TRANSISTOR
4214838/C 04/2017
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
7. Board assembly site may have different recommendations for stencil design.
SOLDER PASTE EXAMPLE
BASED ON 0.125 THICK STENCIL
SCALE:15X
SYMM
PKG
1
3
2
www.ti.com
PACKAGE OUTLINE
4.1
3.9
3X
15.5
15.1
3X 0.48
0.35 2X 1.27 0.05
3.25
3.05
3X 0.51
0.36
3X 0.55
0.40
2X (45 )
0.86
0.66
1.62
1.42
2.64
2.44
2.68
2.28
5.05
MAX
(0.5425)
3X (0.8)
4221343/C 01/2018
TO-92 - 5.05 mm max heightLPG0003A
TRANSISTOR OUTLINE
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
13
123
SCALE 1.300
www.ti.com
EXAMPLE BOARD LAYOUT
TYP
ALL AROUND
0.05 MAX FULL R
TYP
(1.07)
(1.7)
(1.27)
(2.54)
(R0.05) TYP 2X (1.07)
2X (1.7)
3X ( 0.75) VIA
4221343/C 01/2018
TO-92 - 5.05 mm max heightLPG0003A
TRANSISTOR OUTLINE
LAND PATTERN EXAMPLE
NON-SOLDER MASK DEFINED
SCALE:20X
METAL
TYP
OPENING
SOLDER MASK
13
2
2X
METAL
2X
SOLDER MASK
OPENING
www.ti.com
TAPE SPECIFICATIONS
0 1 0 1
12.9
12.5
6.55
6.15
13.0
12.4
2.5 MIN 6.5
5.5
3.8-4.2 TYP
9.5
8.5
19.0
17.5
1 MAX
21
18
0.45
0.35
0.25
0.15
TO-92 - 5.05 mm max heightLPG0003A
TRANSISTOR OUTLINE
4221343/C 01/2018
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