Datenblatt für BC846-BC850 von onsemi

BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor
Publication Order Number:
BC846/D
© 2002 Semiconductor Components Industries, LLC.
September-2017, Rev. 2 1
BC846 / BC847 / BC848 / BC850
NPN Epitaxial Silicon Transistor
Features
Switching and Amplifier Applications
Suitable for Automatic Insertion in Thick and Thin-film Circuits
Low Noise: BC850
Complement to BC856, BC857, BC858, BC859, and BC860
Ordering Information(1)
Note:
1. Affix “-A,-B,-C” means hFE classification. Affix “-M” means SOT-23 package. Affix “-TF” means the tape and reel type
packing.
Part Number Marking Package Packing Method
BC846AMTF 8AA SOT-23 3L Tape and Reel
BC846BMTF 8AB SOT-23 3L Tape and Reel
BC846CMTF 8AC SOT-23 3L Tape and Reel
BC847AMTF 8BA SOT-23 3L Tape and Reel
BC847BMTF 8BB SOT-23 3L Tape and Reel
BC847CMTF 8BC SOT-23 3L Tape and Reel
BC848BMTF 8CB SOT-23 3L Tape and Reel
BC848CMTF 8CC SOT-23 3L Tape and Reel
BC850AMTF 8EA SOT-23 3L Tape and Reel
BC850CMTF 8EC SOT-23 3L Tape and Reel
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor
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2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Thermal Characteristics(2)
Values are at TA = 25°C unless otherwise noted.
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Symbol Parameter Value Unit
VCBO Collector-Base Voltage
BC846 80
VBC847 / BC850 50
BC848 30
VCEO Collector-Emitter Voltage
BC846 65
VBC847 / BC850 45
BC848 30
VEBO Emitter-Base Voltage BC846 / BC847 6 V
BC848 / BC850 5
ICCollector Current (DC) 100 mA
TJJunction Temperature 150 °C
TSTG Storage Temperature Range -65 to +150 °C
Symbol Parameter Value Unit
PDPower Dissipation 310 mW
Derate Above 25°C2.48mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 403 °C/W
BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor
Electrical Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Note:
3. Pulse test: pulse width 300 μs, duty cycle 2%
hFE Classification
Symbol Parameter Conditions Min. Typ. Max. Unit
ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 15 nA
hFE DC Current Gain VCE = 5 V, IC = 2 mA 110 800
VCE(sat) Collector-Emitter Saturation
Voltage
IC = 10 mA, IB = 0.5 mA 90 250 mV
IC = 100 mA, IB = 5 mA 200 600
VBE(sat) Collector-Base Saturation Voltage IC = 10 mA, IB = 0.5 mA 700 mV
IC = 100 mA, IB = 5 mA 900
VBE(on) Base-Emitter On Voltage VCE = 5 V, IC = 2 mA 580 660 700 mV
VCE = 5 V, IC = 10 mA 720
fTCurrent Gain Bandwidth Product VCE = 5 V, IC = 10 mA,
f = 100 MHz 300 MHz
Cob Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 3.5 6.0 pF
Cib Input Capacitance VEB = 0.5 V, IC = 0, f = 1 MHz 9 pF
NF Noise
Figure
BC846 / BC847 / BC848 VCE = 5 V, IC = 200 μA,
RG = 2 kΩ, f = 1 kHz
2.0 10.0
dB
BC850 1.2 4.0
BC850 VCE = 5 V, IC = 200 μA,
RG = 2 kΩ, f = 30 to 15000 Hz 1.4 3.0
Classification A B C
hFE 110 ~ 220 200 ~ 450 420 ~ 800
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3
BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter Saturation Voltage
0 4 8 121620
0
20
40
60
80
100
IB = 50μA
IB = 100μA
IB = 150μA
IB = 200μA
IB = 250μA
IB = 300μA
IB = 350μA
IB = 400μA
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.1 1 10 100 1000
10
100
1000
TA = 150 oC
TA = 25 oC
VCE = 5V
hFE, DC CURRENT GAIN
IC [mA], COLLECTOR CURRENT
TA = -55 oC
0.1 1 10 100 1000
0.01
0.1
1
TA = 150oC
TA = -55oC
IC = 10IB
VCE(SAT) [V], COLLECTOR-EMITTER
SATURATION VOLTAGE
IC [mA], COLLECTOR CURRENT
TA = 25oC
0.1 1 10 100 1000
0.01
0.1
1
10
TA = 150oC
TA = -55oC
IC = 20IB
VCE(SAT) [V], COLLECTOR-EMITTER
SATURATION VOLTAGE
IC [mA], COLLECTOR CURRENT
TA = 25oC
0.1 1 10 100 1000
0.2
0.4
0.6
0.8
1.0
1.2
TA = 150oC
TA = -55oC
IC = 10IB
VBE(SAT) [V], BASE-EMITTER SATURATION VOLTAGE
IC [mA], COLLECTOR CURRENT
TA = 25oC
0.1 1 10 100 1000
0.2
0.4
0.6
0.8
1.0
1.2
TA = 150oC
TA = -55oC
IC = 20IB
VBE(SAT) [V], BASE-EMITTER SATURATION VOLTAGE
IC [mA], COLLECTOR CURRENT
TA = 25oC
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4
BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics (Continued)
Figure 7. Base-Emitter On Voltage Figure 8. Collector Output Capacitance
Figure 9. Current Gain Bandwidth Product
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
100
TA = 150oCTA = -55oC
VCE = 5V
IC [mA], COLLECTOR CURRENT
VBE(ON) [V], BASE-EMITTER ON VOLTAGE
TA = 25oC
1 10 100 1000
0.1
1
10
100
f=1MHz
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.1 1 10 100
1
10
100
1000
VCE=5V
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
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5
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