Datenblatt für P82B715 von Texas Instruments

V'.‘ ‘F. B I TEXAS INSTRUMENTS GND
VCC
Lx/LDA
Ly/LCL
GND
Sy/SCL
Sx/SDA
P82B715
Buffer
Buffer
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
P82B715
SCPS145B –DECEMBER 2007–REVISED FEBRUARY 2016
P82B715 I
2
C Bus Extender
1
1 Features
1• Operating Power-Supply Voltage Range of
3Vto12V
• Supports Bidirectional Data Transfer of I2C Bus
Signals
• Allows Bus Capacitance of 400 pF on Main I2C
Bus (Sx/Sy Side) and 3000 pF on Transmission
Side (Lx/Ly Side)
• Dual Bidirectional Unity-Voltage-Gain Buffer With
No External Directional Control Required
• Drives 10× Lower-Impedance Bus Wiring for
Improved Noise Immunity
• Multi-Drop Distribution of I2C Signals Using Low-
Cost Twisted-Pair Cables
• I2C Bus Operation Over 50 Meters of Twisted-Pair
Wire
• Latch-up Performance Exceeds 100 mA Per
JESD 78, Class II
• ESD Protection Exceeds JESD 22
– 2500-V Human-Body Model (A114-A)
– 400-V Machine Model (A115-A)
– 1000-V Charged-Device Model (C101)
2 Applications
• HDMI DDC
• Long I2C Communications
• Industrial Communications
3 Description
The P82B715 is a device for buffering highly-
capacitive I2C bus systems, and it supports
bidirectional data transfer through the I2C bus. The
P82B715 buffers both the serial data (SDA) and
serial clock (SCL) signals on the I2C bus and allows
for extension of the I2C bus, while retaining all the
operating modes and features of the I2C system.
Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
P82B715 SOIC (8) 4.90 mm × 3.91 mm
PDIP (8) 9.81 mm × 6.35 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Block Diagram
l TEXAS INSTRUMENTS
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Table of Contents
1 Features.................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Pin Configuration and Functions......................... 3
6 Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 4
6.5 Electrical Characteristics........................................... 5
6.6 Switching Characteristics.......................................... 5
6.7 Typical Characteristics.............................................. 6
7 Parameter Measurement Information .................. 6
8 Detailed Description.............................................. 7
8.1 Overview ................................................................... 7
8.2 Functional Block Diagram......................................... 7
8.3 Feature Description................................................... 7
8.4 Device Functional Modes.......................................... 8
9 Application and Implementation .......................... 9
9.1 Application Information.............................................. 9
9.2 Typical Application .................................................... 9
10 Power Supply Recommendations ..................... 13
11 Layout................................................................... 13
11.1 Layout Guidelines ................................................. 13
11.2 Layout Example .................................................... 13
12 Device and Documentation Support ................. 14
12.1 Community Resource............................................ 14
12.2 Trademarks........................................................... 14
12.3 Electrostatic Discharge Caution............................ 14
12.4 Glossary................................................................ 14
13 Mechanical, Packaging, and Orderable
Information ........................................................... 14
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (February 2008) to Revision B Page
• Added ESD Ratings table, Feature Description section, Device Functional Modes,Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1
l TEXAS INSTRUMENTS HHHH HHHH G HHHHHM LAva 0 C) NC 7 No mtema‘ connecuon
18
NC VCC
27
Lx Ly
36
Sx Sy
45
GND NC
NC – No internal connection
18
NC VCC
27
Lx Ly
36
Sx Sy
45
GND NC
3
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5 Pin Configuration and Functions
P Package
8-Pin PDIP
Top View
D Package
8-Pin SOIC
Top View
Pin Functions
PIN I/O DESCRIPTION
NO. NAME
1 NC — No connection
2 Lx I/O Buffered serial data bus or LDA
3 Sx I/O Serial data bus or SDA. Connect to VCC of I2C master through a pullup resistor.
4 GND — Ground
5 NC — No connection
6 Sy I/O Serial clock bus or SCL. Connect to VCC of I2C master through a pullup resistor.
7 Ly I/O Buffered serial clock bus or LCL
8 VCC I Supply voltage
l TEXAS INSTRUMENTS
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(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage –0.3 12 V
VbI2C bus voltage Sx or Sy 0 VCC V
Buffered bus voltage Lx or Ly 0 VCC
IOContinuous output current Sx or Sy 60 mA
Lx or Ly 60
ICC Continuous current through VCC or GND 60 mA
Tstg Storage temperature –55 125 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE UNIT
V(ESD) Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2500
V
Charged-device model (CDM), per JEDEC specification JESD22-
C101(2) ±1000
Machine model (MM) ±400
(1) Operation with reduced performance is possible down to 3 V. Typical static sinking performance is not degraded at 3 V, but the dynamic
sink currents while the output is being driven through VCC/2 are reduced and can increase fall times. Timing-critical designs should
accommodate the specified minimums.
6.3 Recommended Operating Conditions
MIN MAX UNIT
VCC Supply voltage(1) 4.5 12 V
TAOperating free-air temperature –40 85 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.4 Thermal Information
THERMAL METRIC(1)
P82B715
UNITD (SOIC) P (PDIP)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 105.3 48.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 51.1 38.1 °C/W
RθJB Junction-to-board thermal resistance 46.2 26.1 °C/W
ψJT Junction-to-top characterization parameter 8.5 15.4 °C/W
ψJB Junction-to-board characterization parameter 45.6 26 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A °C/W
l TEXAS INSTRUMENTS
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(1) Buffer is passive in this test. The Sx/Sy sink current flows through an internal resistor to the driver connected at the Lx/Ly I/O.
6.5 Electrical Characteristics
VCC = 5 V, TA= 25°C, voltages are specified with respect to GND (unless otherwise specified)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ICC Quiescent supply current
Sx = Sy = VCC 14
mA
VCC = 12 V 15
Both I2C inputs low,
Both buffered outputs sinking 30 mA 22
IIOS Output sink current on I2C bus Sx, Sy
VCC > 3 V,
VSx, VSy (low) = 0.4 V,
VLx, VLy (low) on buffered bus = 0.3 V,
ILx, ILy = –3 mA (1)
2.6 mA
IIOL Output sink current on buffered
bus Lx, Ly
VLx, VLy (low) = 0.4 V,
VSx, VSy (low) on I2C bus = 0.3 V 30
mA
3 V < VCC < 4.5 V,
VLx, VLy (low) = 0.4 V to 1.5 V,
ISx, ISy sinking on I2C bus < –4 mA 24
3 V < VCC < 4.5 V,
VLx, VLy (low) = 1.5 V to VCC,
ISx, ISy sinking on I2C bus = –7 mA 24
II
Input current from I2C bus Sx, Sy ILx, ILy sink on buffered bus = 30 mA –3.2
mA
Input current from buffered bus(1)
Lx, Ly
VCC > 3 V,
ISx, ISy sink on I2C bus = 3 mA(1) –3
Leakage current on buffered bus VCC = 3 V to 12 V,
VLx, VLy = VCC,
VSx, VSy = VCC
200 μA
Zin/Zout Input/output impedance VSx < VLx, Buffer is active 8 10 13
(1) A conventional input-output delay is not observed in the Sx/Lx voltage waveforms, because the input and output pins are internally tied
with a 30-Ωresistor so they show equal logic voltage levels to within 100 mV. When connected in an I2C system, an Sx/Sy input pin
cannot rise/fall until the buffered bus load at the output pin has been driven by the internal amplifier. This test measures the bus
propagation delay caused to falling or rising voltages at the Lx/Ly output (as well as the Sx/Sy input) by the amplifier’s response time.
The figure given is measured with a drive current as shown in Figure 2. Because this is a dynamic bus test in which a corresponding
bus driving IC has an output voltage well above 0.4 V, 6 mA is used instead of the static 3 mA.
(2) The signal path Lx to Sx and Ly to Sy is passive through the internal 30-Ωresistor. There is no amplifier involved and essentially no
signal propagation delay.
6.6 Switching Characteristics
VCC = 5 V, TA= 25°C, no capacitive loads, voltages are specified with respect to GND (unless otherwise specified)
PARAMETER TEST CONDITIONS FROM
(INPUT) TO
(OUTPUT) MIN TYP MAX UNIT
BUFFER DELAY TIMES
trise/fall
Delay time to VLx voltage crossing VCC/2 for
input drive current step ISx at Sx(1) (see
Figure 2)RLx pullup = 270 ΩISx
ISy
VLx
VLy 250 ns
Buffer delay time, switching edges between
VLx input and
VSx output(2) RLx pullup = 4700 ΩVLx
VLy
VSx
VSy 0 ns
‘5‘ TEXAS INSTRUMENTS 02
Input
Current
Input and
Output
Voltage
tdtd
0 V
5 V
4.7 kΩ
270 Ω
4.7 kΩ
5 V
I = 6 mA
P82B715 P82B715 Output
Input
Sx Lx Lx Sx
6
P82B715
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6.7 Typical Characteristics
Figure 1. Typical VOL of Lx/Ly (RPU on Sx = 4.7 kΩ, TA= 25 C, VSX = 0 V)
7 Parameter Measurement Information
Figure 2. Test Circuit for Delay Times
l TEXAS INSTRUMENTS GND
VCC
Lx/LDA
Ly/LCL
GND
Sy/SCL
Sx/SDA
P82B715
Buffer
Buffer
7
P82B715
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8 Detailed Description
8.1 Overview
The I2C bus capacitance limit of 400 pF restricts practical communication distances to a few meters. One of the
advantages of the P82B715 is that it can isolate bus capacitance such that the total loading (devices,
connectors, traces and wires) of the new bus or remote I2C nodes are not apparent to other I2C buses (or
nodes). This is achieved by using one P82B715 device at each end of a long cable. The pin Lx of one P82B715
device must be connected to Lx of the second P82B715 (similarly for Ly). This allows the total system
capacitance load to be around 3000 pF. The P82B715 uses unidirectional analog current amplification to
increase the current sink capability of I2C chips to change the 400-pF I2C bus specification limit into a 3-nF bus
wiring capacitance limit. That means longer cables or lower-cost general-purpose wiring may be used to connect
two separate I2C-based systems, without worrying about the special voltage levels associated with other I2C bus
buffers.
Multiple P82B715s can be connected together in a star or multipoint architecture by their Lx/Ly ports, without
limit, as long as the total capacitance of the system remains less than about 3000 pF (400 pF or less when
referenced to any Sx/Sy connection). In that arrangement, the master and/or slave devices are attached to the
Sx/Sy port of each P82B715. In normal use, the power-supply voltages at each end of the low-impedance
buffered bus line should be the same. If these differ by a significant amount, noise margin is sacrificed.
Two or more Sx or Sy I/Os can be interconnected and are also fully compatible with bus buffers that use voltage-
level offsets (such as the TCA9517) because it duplicates and transmits the offset voltage.
8.2 Functional Block Diagram
8.3 Feature Description
8.3.1 Sx and Sy
The I2C pins (Sx and Sy) are designed to interface with a normal I2C bus. The maximum I2C bus supply voltage
is 12 V. The Sx and Sy pins contain identical circuitry and can be used interchangeably as SCL or SDA.
8.3.2 Lx and Ly
The Lx and Ly pins are designed to interface with the high capacitance bus. This port of the device features
circuitry to assist in sinking large amounts of currents required to operate a large capacitance bus at high
speeds. More on this circuitry can be found in Lx/Ly Buffered Bus Circuitry.
8.3.3 Lx/Ly Buffered Bus Circuitry
On the special low-impedance or buffered-line side, the corresponding output becomes the LDA data line or LCL
clock line. The P82B715 provides current amplification from its I2C bus to its low impedance or buffered bus.
Whenever current is flowing out of Sx into an I2C chip driving the I2C bus low, its amplifier sinks ten times that
current into Lx, to drive the buffered bus low (see Figure 3). To minimize interference and ensure stability, the
current rise and fall times of the Lx drive amplifier are internally controlled. The P82B715 does not amplify signal
l TEXAS INSTRUMENTS
I =I
Sx Lx
ISx
Current
Sense
ISx I =10 I
Lx Sx
´
I CBusSx
2
VCC
GND
30 W
LxBufferedBus
+
–
9 I´Sx
8
P82B715
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Feature Description (continued)
currents flowing into Sx on the I2C bus driven by currents flowing out of Lx on the buffered side. A buffered bus
logic low signal at Lx passes through the internal 30-Ωresistor to drive the I2C bus low. This signal current
amplification, dependent on its direction, preserves the multi-master bidirectional open-collector/open-drain
characteristic of any connected I2C bus lines and the new low-impedance bus. Bus logic-signal voltage levels are
clamped at (VCC + 0.7 V) but, otherwise, are independent of the supply voltage, VCC.
Figure 3. Equivalent Circuit (One-Half of P82B715)
8.4 Device Functional Modes
The P82B715 has two modes when powered, which depend on the state of the I2C bus.
8.4.1 Idle Bus
When the I2C bus is idle and high, little or no current flows through the device. In this case, the Lx/Ly buffer is not
turned on.
8.4.2 Active-Low Bus
When a device connected to the Sx / Sy side of the device is transmitting a 0, a large amount of current will flow
through the P82B715, which activates the internal pulldown to assist with the large capacitance.
l TEXAS INSTRUMENTS Bus Bus
VCC
Special
Buffered
Bus
Special
Buffered
Bus
Standard
I C Bus
2
Standard
I C Bus
2
SDA
SCL
I C
Device
2
SDA
SCL
P82B715
P82B715
LDA
LCL
Long
Cable
½
½
½
½
9
P82B715
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The P82B715 can operate with a supply voltage from 3 V to 12 V, but the logic-signal levels at Sx/Lx are
independent of the supply voltage. They remain at the levels presented to the chip by the attached devices. The
maximum static I2C bus sink current, 3 mA, flowing in either direction in the internal current sense resistor,
causes a difference less than 100 mV in the bus logic low levels at Sx and Lx. This makes P82B715 fully
compatible with all logic signal drivers, including TTL. The P82B715 cannot modify the bus logic signal voltage
levels, but it contains internal diodes connected between Lx/Sx and VCC that conduct and limit the logic signal
swing if the applied logic levels would have exceeded the supply voltage by more than 0.7 V.
In normal applications, external pullup resistors pull the connected buses up to the desired voltage high level.
Usually this is the supply voltage, VCC, but for very low logic voltages, it is necessary to use a VCC of at least
3.3 V and preferably higher. Note that full performance over temperature is ensured only from 4.5 V.
Specification deratings apply when its supply voltage is reduced below 4.5 V. The absolute minimum VCC is 3 V.
9.2 Typical Application
By using two (or more) P82B715 devices, a subsystem can be built that retains the interface characteristics of a
normal I2C device so that the subsystem may be included in, or added to, any I2C or related system.
The subsystem features a low-impedance or buffered bus capable of driving large wiring capacitance (see
Figure 4).
Figure 4. Minimum Subsystem Diagram
9.2.1 Design Requirements
Table 1 lists the design parameters for this example.
Table 1. Design Parameters
PARAMETER DESCRIPTION VALUE
VCC Supply Voltage 3.3 V
CLx Capacitance on the Lx / Ly bus 3000 pF
RPU_Sx Pullup resistor for the Sx / Sy bus 4700 Ω
RPU_Lx Pullup resistor for the Lx / Ly bus 330 Ω
Sx Lx
Sy Ly
R2R1 R3
SDA
SCL
V =5V
CC
BufferedBus
R4
SDA
SCL
V =5V
CC
SDA
SCL
I C3
2
I C2
2
I C1
2Lx Sx
Ly Sy
Lx Sx
Ly Sy
10
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9.2.2 Detailed Design Procedure
9.2.2.1 I2C Systems
As in standard I2C systems, pullup resistors are required to provide the logic high levels on the buffered bus, as
the standard open-collector configuration is retained. The size and number of pullup resistors depends on the
system.
If P82B715 devices are to be permanently connected into a system, the circuit may be configured with only one
pullup resistor on the buffered bus and none on the I2C buses, but the system design is simplified, and
performance is improved by fitting separate pullups on each section of the bus. When a subsystem using
P82B715 may be optionally connected to an existing I2C system that already has a pullup, the effects of the
subsystem pullups acting in parallel with the existing I2C bus pullup must be considered.
9.2.2.2 Pullup Resistance Calculation
When calculating the pullup resistance values, the gain of the buffer introduces scaling factors that must be
applied to the system components. In practical systems, the pullup resistance value is calculated to meet the rise
time limit for I2C systems. As an approximation, this limit is satisfied in a 100-kHz system if the time constant of
the total system (product of the net resistance and net capacitance) is set to 1 μs or less.
In systems using the P82B715, it is convenient to set the total system time constant by considering each bus
node separately (that is, the I2C nodes and the buffered bus node) and selecting a separate pullup resistor for
each node to provide time constants of less than 1 μs. If each node complies then the system requirement is
also met.
This arrangement, using multiple pullups as shown in Figure 5, provides the best system performance and allows
stand-alone operation of individual I2C buses if parts of the extended system are disconnected or reconnected.
For each bus section, the pullup resistor is calculated as:
R = 1 μs/(Cdevice + Cwiring)
where
• Cdevice = Sum of any connected device capacitances
• Cwiring = Total wiring and stray capacitance on the bus section (1)
The 1 μs is an approximation with a safety factor to the theoretical time constant necessary to meet the specified
1-μs bus rise-time specification in a system with variable logic thresholds, where the CMOS limits of 30% and
70% of VCC apply. The calculated value is 1.18 μs.
If these capacitances cannot be measured or calculated, an approximation can be made by assuming that each
device presents 10 pF of load capacitance and 10 pF of trace capacitance, and that cables range from 50 pF to
100 pF per meter.
Figure 5. Single Pullup Buffered Bus
If only a single pullup is used, it must be placed on the buffered bus (as R2 in Figure 5) and the associated total
system capacitance calculated by combining the individual bus capacitances into an equivalent capacitive
loading on the buffered bus.
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This equivalent capacitance is the sum of the capacitance on the buffered bus plus ten times the sum of the
capacitances on all the connected I2C nodes. The calculated value should not exceed 4 nF. The single buffered
bus pullup resistor is then calculated to achieve the 1-μs rise time, and it provides the pullup for the buffered bus
and for all other connected I2C bus nodes included in the calculation.
9.2.2.3 Calculating Bus Drive Currents
Figure 5 shows three P82B715 devices connected to a common buffered bus. The associated bus capacitances
are omitted for clarity, but assume the resistors have been selected to give R-C products of less than 1 μs so the
bus rise-time requirement is satisfied. An I2C device connected at I2C 1 and holding the SDA bus low must sink
the current flowing in its local pullup R1, plus, with assistance from the P82B715, the currents in R2, R3, and R4.
Because the resistors R3 and R4 act to pull the bus nodes I2C 2 and I2C 3 and their corresponding Sx pins to a
voltage higher than the voltage at the Lx pins, their buffer amplifiers are inactive. The SDA at Sx of I2C 2 and I2C
3 is pulled low by the low at Lx through the internal 30-Ωresistor that links Lx to Sx. So the effective current that
must be sunk by the P82B715 buffer on I2C 1 at its Lx pin is the sum of the currents in R2, R3, and R4. The Sx
current that must be sunk by an I2C device at I2C 1 due to the buffer gain action is 1/10 of the Lx current. So the
effective pullup determining the current to be sunk by an I2C device at I2C 1 is R1 in parallel with resistors ten
times the values of R2, R3, and R4. If R1 = R3 = R4 = 10 kΩ,andR2=1kΩ, the effective pullup load at I2C 1 is
10 kΩ||10 kΩ||100 kΩ||100 kΩ= 4.55 kΩ.
The same calculation applies for I2C2orI2C 3.
To calculate the current sunk by the Lx pin of the buffer at I2C 1, note that the current in R1 is sunk directly by
the device at I2C 1. The buffer, therefore, sinks only the currents flowing in R2, R3, and R4, so the effective
pullup is R2 in parallel with R3 and R4.
In this example that is 1 kΩ||10 kΩ||10 kΩ= 833 Ω. For a 5.5-V supply and 0.4-V low, the buffer is sinking
16.3 mA.
The P82B715 has a static sink rating of 30 mA at Lx. The requirement is that the pullup on the buffered bus, in
parallel with all other pullups that it is indirectly pulling low on Sx pins of other P82B715 devices, does not cause
this 30-mA limit to be exceeded.
The minimum pullup resistance in a 5-V ± 10% system is 170 Ω.
The general requirement is:
(VCC(max) – 0.4)/RP< 30 mA
where
• Rp= Parallel combination of all pullup resistors driven by the Lx pin of the P82B715 (2)
Figure 6 shows calculations for an expanded I2C bus with 3 nF of cable capacitance.
l TEXAS INSTRUMENTS
Time
Voltage (V)
0
0.5
1
1.5
2
2.5
3
3.5
D002
Lx/Ly
Sx/Sy
R1 =
1µs
50 pF =20 kΩ
LocalI CPullup
2
R2 =
1µs
3000 pF =330 Ω
BufferedBusPullup
LocalBus ProposedBusExpansion
5V
0V
VCC
GND
I C
2
3nF=CableWiringCapacitance
R3
R2R1
SDA
SDA
SDA
LDA
Sx Lx
Lx Sx I C
2
I C
2
R3 =30 pF =33 kΩ
RemoteI CPullup
2
1µs
2 I CDevices×2
Strays
P82B715
Total
20pF
20pF
10pF
50pF
WiringCapacitance
Total
3000pF
3000pF
1 I CDevices×2
Strays
P82B715
Total
10pF
10pF
10pF
30pF
EffectiveCapacitance
RemoteI CDevices
2
EffectiveCapacitance
BufferedLine
EffectiveCapacitance
LocalBusI CDevices
2
12
P82B715
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Figure 6. Typical Loading Calculations
9.2.3 Application Curve
Figure 7. Voltage On Bus (3000 pF on Lx/Ly With RPU = 330 Ω)
l TEXAS INSTRUMENTS ,\ \/ HHHH UUUU
VCC
Ly
Sy
NC
NC
Lx
Sx
GND
0603 Cap
To low-capacitance bus
To high-capacitance bus
= VIA to ground plane
13
P82B715
www.ti.com
SCPS145B –DECEMBER 2007–REVISED FEBRUARY 2016
Product Folder Links: P82B715
Submit Documentation FeedbackCopyright © 2007–2016, Texas Instruments Incorporated
10 Power Supply Recommendations
The P82B715 power supply requirements can be see in the Recommended Operating Conditions. Note that the
P82B715 can operate down to 3 V, but at reduced performance.
11 Layout
11.1 Layout Guidelines
General layout best practices are recommended. It is common to have a dedicated ground plane on an inner
layer of the board, and pins that are connected to ground must have a low-impedance path to the ground place
in the form of wide polygon pours, and multiple vias.
Bypass and decoupling capacitors are commonly used to control the voltage on the VCC pin, using a larger
capacitor to provide additional power in the event of a short power supply glitch (typically 1 μF), and a smaller
capacitor (typically 0.1 μF) to filter out high-frequency ripple.
11.2 Layout Example
Figure 8. D Package Example Layout
l TEXAS INSTRUMENTS
14
P82B715
SCPS145B –DECEMBER 2007–REVISED FEBRUARY 2016
www.ti.com
Product Folder Links: P82B715
Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated
12 Device and Documentation Support
12.1 Community Resource
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.2 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.4 Glossary
SLYZ022 —TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
TEXAS INSTRUMENTS Samples Samples Sample: Sample: Samples Samples
PACKAGE OPTION ADDENDUM
www.ti.com 14-Aug-2021
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead finish/
Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
P82B715D ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 PG715
P82B715DG4 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 PG715
P82B715DR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 PG715
P82B715DRG4 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 PG715
P82B715P ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 P82B715P
P82B715PE4 ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 P82B715P
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
I TEXAS INSTRUMENTS
PACKAGE OPTION ADDENDUM
www.ti.com 14-Aug-2021
Addendum-Page 2
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
l TEXAS INSTRUMENTS REEL DIMENSIONS TAPE DIMENSIONS ’ I+K0 '«PI» Reel Diame|er AD Dimension deSIgned Io accommodate me componem wIdIh E0 Dimension desIgned Io eeeemmodaIe me component Iengm K0 Dlmenslun desIgned to accommodate me componem Ihlckness 7 w Overall with loe earner cape i p1 Pitch between successwe cavIIy cemers f T Reel Width (W1) QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE O O O D O O D O SprockeIHoles ,,,,,,,,,,, ‘ User Direcllon 0' Feed Pocket Quadrams
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
P82B715DR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 5-Jan-2022
Pack Materials-Page 1
l TEXAS INSTRUMENTS TAPE AND REEL BOX DIMENSIONS
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
P82B715DR SOIC D 8 2500 853.0 449.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 5-Jan-2022
Pack Materials-Page 2
l TEXAS INSTRUMENTS T - Tube height| L - Tube length l ,g + w-Tuhe _______________ _ ______________ width 47 — B - Alignment groove width
TUBE
*All dimensions are nominal
Device Package Name Package Type Pins SPQ L (mm) W (mm) T (µm) B (mm)
P82B715D D SOIC 8 75 506.6 8 3940 4.32
P82B715DG4 D SOIC 8 75 506.6 8 3940 4.32
P82B715P P PDIP 8 50 506 13.97 11230 4.32
P82B715PE4 P PDIP 8 50 506 13.97 11230 4.32
PACKAGE MATERIALS INFORMATION
www.ti.com 5-Jan-2022
Pack Materials-Page 3
‘J
www.ti.com
PACKAGE OUTLINE
C
.228-.244 TYP
[5.80-6.19]
.069 MAX
[1.75]
6X .050
[1.27]
8X .012-.020
[0.31-0.51]
2X
.150
[3.81]
.005-.010 TYP
[0.13-0.25]
0 - 8 .004-.010
[0.11-0.25]
.010
[0.25]
.016-.050
[0.41-1.27]
4X (0 -15 )
A
.189-.197
[4.81-5.00]
NOTE 3
B .150-.157
[3.81-3.98]
NOTE 4
4X (0 -15 )
(.041)
[1.04]
SOIC - 1.75 mm max heightD0008A
SMALL OUTLINE INTEGRATED CIRCUIT
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
18
.010 [0.25] C A B
5
4
PIN 1 ID AREA
SEATING PLANE
.004 [0.1] C
SEE DETAIL A
DETAIL A
TYPICAL
SCALE 2.800
Yl“‘+
www.ti.com
EXAMPLE BOARD LAYOUT
.0028 MAX
[0.07]
ALL AROUND
.0028 MIN
[0.07]
ALL AROUND
(.213)
[5.4]
6X (.050 )
[1.27]
8X (.061 )
[1.55]
8X (.024)
[0.6]
(R.002 ) TYP
[0.05]
SOIC - 1.75 mm max heightD0008A
SMALL OUTLINE INTEGRATED CIRCUIT
4214825/C 02/2019
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
METAL SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
EXPOSED
METAL
OPENING
SOLDER MASK METAL UNDER
SOLDER MASK
SOLDER MASK
DEFINED
EXPOSED
METAL
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:8X
SYMM
1
45
8
SEE
DETAILS
SYMM
www.ti.com
EXAMPLE STENCIL DESIGN
8X (.061 )
[1.55]
8X (.024)
[0.6]
6X (.050 )
[1.27] (.213)
[5.4]
(R.002 ) TYP
[0.05]
SOIC - 1.75 mm max heightD0008A
SMALL OUTLINE INTEGRATED CIRCUIT
4214825/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
SOLDER PASTE EXAMPLE
BASED ON .005 INCH [0.125 MM] THICK STENCIL
SCALE:8X
SYMM
SYMM
1
45
8
MECHANICAL DATA P (RiPMPi’E) "LAST‘C >4 >4 7 A V A A M Hnear dw‘ensmns are m inches (miH'nem's) B TH: druwmq is s bje“ :0 change thruut nonce C mus wmhm Juli"; Msiom vanmm BA NUTS DKMLiwi, N¥ PAL’KAC: 4 r ( “ V ‘ 7 v m 31H A H ‘ ‘ M H ‘—’ H w: H J; W“ D u‘ L , ,_ , 40mm: 04/2010 INSI'RUMENTS www.mzam
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