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DMP3098L Datasheet

Diodes Incorporated

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Datasheet

DMP3098L
Document number: DS31447 Rev. 8 - 2
1 of 5
www.diodes.com
October 2013
© Diodes Incorporated
DMP3098L
NEW PRODUCT
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) max ID
TA = +25°C
-30V
70m@ VGS = -10V -3.8A
120m@ VGS =-4.5V -3.0A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Power management functions
Analog Switch
Load Switch
Boost Switch
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMP3098L-7 SOT23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free,
"Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View Pin Configuration
D
GS
SOT-23
DMB = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y
̅M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y
̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
DMB
YM
Source
Gate
Drain
EQUIVALENT CIRCUIT
Chengdu A/T Site Shanghai A/T Site
DMP3098L
Document number: DS31447 Rev. 8 - 2
2 of 5
www.diodes.com
October 2013
© Diodes Incorporated
DMP3098L
NEW PRODUCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -30 V
Gate-Source Voltage VGSS ±20 V
Drain Current (Note 5) VGS = -10V Steady
State
TA = +25°C
TA = +70°C ID -3.8
-2.9 A
Pulsed Drain Current (Note 6) IDM -11 A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) PD 1.08 W
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) R
JA 115 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current IDSS -800 nA
VDS = -30V, VGS = 0V
Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS
(
th
)
-1.0 -1.8 -2.1 V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance RDS (ON) 56
98
70
120 m VGS = -10V, ID = -3.8A
VGS = -4.5V, ID = -3.0A
Forward Transfer Admittance |Yfs| 3.6 S VDS = -5V, ID = -2.7A
Diode Forward Voltage (Note 6) VSD -1.26 V
VGS = 0V, IS = -2.7A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss 336 1008 pF
VDS = -25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 70 210 pF
Reverse Transfer Capacitance Crss 49 147 pF
Gate Resistance RG  4.6  VGS = 0V, VDS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge Qg  4.0 8.0
nC
VDS = -15V, VGS = -4.5V,
ID = -3.8A
 7.8  VDS = -15V, VGS = -10V,
ID = -3.8A
Gate-Source Charge Q
g
s  1.0 
Gate-Drain Charge Q
g
d  2.5 
Turn-On Delay Time td
(
on
)
 6.0 12.0
ns VDS = -15V, VGS = -10V,
ID = -1A, RG = 6.0
Rise Time t
r
 5.0 10.0
Turn-Off Delay Time td
(
off
)
 17.6 35.2
Fall Time tf  9.5 19.0
Notes: 5. Device mounted on FR-4 PCB on 2 oz., 0.5 in.2 copper pads and t 5 sec.
6. Pulse width 10S, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMP3098L
Document number: DS31447 Rev. 8 - 2
3 of 5
www.diodes.com
October 2013
© Diodes Incorporated
DMP3098L
NEW PRODUCT
-I , DRAIN CURRENT (A)
D
Fig. 1 Typical Output Characteristics
-V , DRAIN-SOURCE VOLTAGE (V)
DS
0
4
8
12
16
20
012345
V = -2.5V
GS
V = -4.5V
GS
V = -10V
GS
V = -1.5V
GS
V = -3.0V
GS
Fig. 2 Typical Transfer Characteristics
-V , GATE SOURCE VOLTAGE (V)
GS
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
0
4
8
12
16
20
12 3 456
V = -5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
0.01
0.1
1
04 8121620
, S
A
I
D
AIN-S
E
ON-RESISTANCE ( )
DS(ON)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
-I , DRAIN CURRENT (A)
D
V = -4.5V
GS
V = -10V
GS
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
024 6810
, S
A
I
D
AIN-S
E
ON-RESISTANCE ( )
DS(ON)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
-I , DRAIN CURRENT (A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.6
0.8
1.0
1.2
1.4
1.6
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , STATIC DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = -4.5V
I = -4.2A
GS
D
V = -10V
I = -5.3A
GS
D
10
100
1,000
0 5 10 15 20 25 30
C
,
C
A
P
A
C
I
T
AN
C
E (pF)
Fig. 6 Typical Capacitance
-V , DRAIN-SOURCE VOLTAGE (V)
DS
C
iss
C
oss
C
rss
DMP3098L
Document number: DS31447 Rev. 8 - 2
4 of 5
www.diodes.com
October 2013
© Diodes Incorporated
DMP3098L
NEW PRODUCT
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
0.8
1.2
1.6
2.0
2.4
-V ,
A
E
ES
LD V
L
A
E (V)
GS(TH)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
T , AMBIENT TEMPERATURE (°C)
A
-50-250255075100125150
I = -250µA
D
0
2
4
6
8
10
0.4 0.6 0.8 1 1.2
-V , SOURCE-DRAIN VOLTAGE (V)
SD
-I , S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
Fig. 8 Diode Forward Voltage vs. Current
T = 25°C
A
0.01
0.1
1
10
100
0.1 1 10 100
Fig. 9 Safe Operation Area
V , DRAIN-SOURCE VOLTAGE (V)
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
R
Limited
DS(on)
T = 150°C
T = 25°C
Single Pulse
J(max)
A
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10s
W
µ
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.890 1.00 0.975
K1 0.903 1.10 1.025
L 0.45 0.61 0.55
L1 0.25 0.55 0.40
M 0.085 0.150 0.110

All Dimensions in mm
DMP3098L
Document number: DS31447 Rev. 8 - 2
5 of 5
www.diodes.com
October 2013
© Diodes Incorporated
DMP3098L
NEW PRODUCT
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
XE
Y
C
Z

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