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MACOM Technology Solutions
GaN on SiC RF Transistors
NXP USA Inc.
GaN on SiC RF Transistors
 
Central Semiconductor Corp
NPN RF Transistors
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GaN on SiC RF Transistors

GaN on SiC HEMT Pulsed Power Transistor

NXP USA Inc.

NXP's power transistor is designed for wideband operation up to 2690 MHz. The high gain, rugged and wideband performance of this device make it ideal for large-signal, common-source amplifier applications for linear and compressed amplifier circuits.

Features
  • Advanced GaN on SiC, offering high power density
  • Suitable for octave and decade bandwidth wideband amplifiers
  • Input matching for extended wideband performance
  • High ruggedness
  • Low thermal resistance
Applications
  • Wideband or narrowband amplifiers
  • Ideal for multi octave communication applications
  • Professional and military radios
  • Radar, jammers and electronic warfare
  • General purpose wideband amplifiers
Specifications
  • Current - Test:350mA
  • Frequency:2.5GHz
  • Gain:18dB
  • Package / Case:NI-360H-2SB
  • Power - Output:125W
  • Supplier Device Package:NI-360H-2SB
  • Transistor Type:HEMT
  • Voltage - Rated:125V
  • Voltage - Test:50V
Parts